ON Semiconductor NTJD4401NT1
- Part Number:
- NTJD4401NT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848321-NTJD4401NT1
- Description:
- MOSFET 2N-CH 20V 0.63A SOT363
- Datasheet:
- NTJD4401NT1
ON Semiconductor NTJD4401NT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD4401NT1.
- Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn80Pb20)
- HTS Code8541.21.00.95
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- Max Power Dissipation270mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating630mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberNTJD4401N
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation270mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs375m Ω @ 630mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
- Rise Time227ns
- Fall Time (Typ)227 ns
- Turn-Off Delay Time786 ns
- Continuous Drain Current (ID)630mA
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.375Ohm
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Feedback Cap-Max (Crss)5 pF
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTJD4401NT1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTJD4401NT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTJD4401NT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTJD4401NT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTJD4401NT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTJD4401NT1 More Descriptions
Dual N-Channel Small Signal MOSFET with ESD Protection 20V 630mA 375mΩ
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 3nC @ 4.5V 630mA 270mW 227ns
MOSFETs- Power and Small Signal 20V Dual N-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 3nC @ 4.5V 630mA 270mW 227ns
MOSFETs- Power and Small Signal 20V Dual N-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to NTJD4401NT1.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFET TechnologyFET FeatureFeedback Cap-Max (Crss)RoHS StatusLead FreeFactory Lead TimeResistanceDrain to Source Voltage (Vdss)Polarity/Channel TypeThreshold VoltageHeightLengthWidthREACH SVHCRadiation HardeningMountDrain Current-Max (Abs) (ID)View Compare
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NTJD4401NT1OBSOLETE (Last Updated: 1 day ago)Surface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)2009e0noObsolete1 (Unlimited)6EAR99Tin/Lead (Sn80Pb20)8541.21.00.95FET General Purpose Power20V270mWGULL WING240not_compliant630mA30NTJD4401N6Not Qualified2DualENHANCEMENT MODE270mW2 N-Channel (Dual)SWITCHING375m Ω @ 630mA, 4.5V1.5V @ 250μA46pF @ 20V3nC @ 4.5V227ns227 ns786 ns630mA12V0.375Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate5 pFNon-RoHS CompliantContains Lead-------------
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ACTIVE (Last Updated: 20 hours ago)Surface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)2004e3yesActive1 (Unlimited)6EAR99Tin (Sn)-Other Transistors-400mWGULL WING260-630mA40NTJD11556-2DualENHANCEMENT MODE400mWN and P-ChannelSWITCHING175m Ω @ 1.2A, 4.5V1V @ 250μA-----1.3A1V--8VMETAL-OXIDE SEMICONDUCTORStandard-ROHS3 CompliantLead Free15 Weeks130mOhm8VN-CHANNEL AND P-CHANNEL1V1mm2.2mm1.35mmNo SVHCNo--
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LAST SHIPMENTS (Last Updated: 3 days ago)Surface Mount6-TSSOP, SC-88, SOT-363-6SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)-Other Transistors-8V270mWGULL WING260unknown-775mA40NTJD2152P6Not Qualified2DualENHANCEMENT MODE270mW2 P-Channel (Dual)SWITCHING300m Ω @ 570mA, 4.5V1V @ 250μA225pF @ 8V4nC @ 4.5V23ns23 ns50 ns775mA8V0.3Ohm-8VMETAL-OXIDE SEMICONDUCTORLogic Level Gate40 pFRoHS CompliantLead Free----------Surface Mount0.775A
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-Surface Mount6-TSSOP, SC-88, SOT-363-6SILICON-55°C~150°C TJTape & Reel (TR)2008e3-Obsolete1 (Unlimited)6EAR99Tin (Sn)-FET General Purpose Power20V270mWGULL WING260-775mA40NTJD4401N6Not Qualified2DualENHANCEMENT MODE270mW2 N-Channel (Dual)SWITCHING375m Ω @ 630mA, 4.5V1.5V @ 250μA46pF @ 20V3nC @ 4.5V227ns227 ns786 ns630mA12V0.375Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate5 pFRoHS CompliantLead Free----------Surface Mount-
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