ON Semiconductor NTF3055-100T1G

NTF3055-100T1G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 455pF @ 25V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 9A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

NTF3055-100T1G Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 9A.
a threshold voltage of 3V


NTF3055-100T1G Applications
There are a lot of ON Semiconductor
NTF3055-100T1G applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching