ON Semiconductor NTD3055L104G
- Part Number:
- NTD3055L104G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2489432-NTD3055L104G
- Description:
- MOSFET N-CH 60V 12A DPAK
- ECAD Model:
-
- Datasheet:
- NTD3055L104G
ON Semiconductor NTD3055L104G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD3055L104G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.5W Ta 48W Tj
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs104mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Ta
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±15V
- RoHS StatusROHS3 Compliant
NTD3055L104G Overview
The maximum input capacitance of this device is 440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (5V), this device helps reduce its power consumption.
NTD3055L104G Features
a 60V drain to source voltage (Vdss)
NTD3055L104G Applications
There are a lot of Rochester Electronics, LLC
NTD3055L104G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (5V), this device helps reduce its power consumption.
NTD3055L104G Features
a 60V drain to source voltage (Vdss)
NTD3055L104G Applications
There are a lot of Rochester Electronics, LLC
NTD3055L104G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NTD3055L104G More Descriptions
Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ
Tube Surface Mount N-Channel Single Mosfet Transistor 12A Ta 12A 48W 40.5ns
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.104ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.6V; Voltage Vgs Rds on Measurement: 5V
Tube Surface Mount N-Channel Single Mosfet Transistor 12A Ta 12A 48W 40.5ns
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.104ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.6V; Voltage Vgs Rds on Measurement: 5V
The three parts on the right have similar specifications to NTD3055L104G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLifecycle StatusFactory Lead TimeSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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NTD3055L104GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.5W Ta 48W TjN-Channel104mOhm @ 6A, 5V2V @ 250μA440pF @ 25V12A Ta20nC @ 5V60V5V±15VROHS3 Compliant-------------------------------------------------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJCut Tape (CT)Active1 (Unlimited)MOSFET (Metal Oxide)1.5W Ta 48W TjN-Channel104m Ω @ 6A, 5V2V @ 250μA440pF @ 25V12A Ta20nC @ 5V-5V±15VROHS3 CompliantACTIVE (Last Updated: 2 days ago)8 WeeksYES3SILICON2004e3yes2EAR99104MOhmTin (Sn)FET General Purpose Power60VGULL WING26012A403R-PSSO-G21SingleENHANCEMENT MODE48WDRAIN9.2 nsSWITCHING104ns40.5 ns19 ns12A1.6V15V60V45A1.6 V2.38mm6.73mm6.22mmNo SVHCNoLead Free-------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.2W Ta 25.9W TcN-Channel13.9m Ω @ 15A, 10V2.5V @ 250μA702pF @ 12V7.6A Ta 34.5A Tc10.5nC @ 4.5V16V4.5V 10V±16VROHS3 Compliant--YES-SILICON-e3yes2--TIN--GULL WINGNOT SPECIFIED-NOT SPECIFIED3R-PSSO-G21-ENHANCEMENT MODE-DRAIN-SWITCHING-------78A-------SINGLECOMMERCIALSINGLE WITH BUILT-IN DIODE7.6A0.029Ohm16V15 mJ
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.2W Ta 34.9W TcN-Channel8.75m Ω @ 15A, 10V2.5V @ 250μA963pF @ 12V9.6A Ta 51A Tc12.8nC @ 4.5V16V4.5V 10V±16VROHS3 Compliant--YES-SILICON-e3yes3--TIN--FLATNOT SPECIFIED-NOT SPECIFIED3R-PSSO-F31-ENHANCEMENT MODE-DRAIN-SWITCHING-------114A-------SINGLECOMMERCIALSINGLE WITH BUILT-IN DIODE9.6A0.0145Ohm16V15 mJ
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