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NTD18N06LT4G

ON Semiconductor NTD18N06LT4G

Part Number:
NTD18N06LT4G
Manufacturer:
ON Semiconductor
Ventron No:
2479283-NTD18N06LT4G
Description:
MOSFET N-CH 60V 18A DPAK
ECAD Model:
Datasheet:
NTD18N06LT4G

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Specifications
ON Semiconductor NTD18N06LT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD18N06LT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    7 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    54mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    18A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    2.1W Ta 55W Tj
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    55W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    65m Ω @ 9A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    675pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    18A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 5V
  • Rise Time
    79ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±15V
  • Fall Time (Typ)
    38 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    18A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    15V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    54A
  • Avalanche Energy Rating (Eas)
    72 mJ
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD18N06LT4G Description
NTD18N06LT4G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor, which is specifically designed for low voltage, high-speed switching applications in power supplies, converters, and power motor controls and bridge circuits. It is available in the DPAK package which provides a space-saving function.

NTD18N06LT4G Features
Low on-state resistance
Low gate charge
High dv/dt capability
Fast switching speed
Available in the DPAK package

NTD18N06LT4G Applications
Converters
Bridge circuits
Power supplies
Power motor controls
NTD18N06LT4G More Descriptions
Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ
N-Channel 60 V 54 mOhm 55 W Tab Mount Power MOSFET - TO-252-3
NTD18N06LT4G N-channel MOSFET Transistor, 18 A, 60 V, 3-Pin DPAK | ON Semiconductor NTD18N06LT4G
Trans MOSFET N-CH 60V 18A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 60V 18A DPAK
MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.8V
Product Comparison
The three parts on the right have similar specifications to NTD18N06LT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Terminal Position
    Reach Compliance Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Mount
    HTS Code
    View Compare
  • NTD18N06LT4G
    NTD18N06LT4G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    7 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    54mOhm
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    260
    18A
    40
    3
    R-PSSO-G2
    1
    2.1W Ta 55W Tj
    Single
    ENHANCEMENT MODE
    55W
    DRAIN
    9.9 ns
    N-Channel
    SWITCHING
    65m Ω @ 9A, 5V
    2V @ 250μA
    675pF @ 25V
    18A Ta
    22nC @ 5V
    79ns
    5V
    ±15V
    38 ns
    19 ns
    18A
    1.8V
    15V
    60V
    54A
    72 mJ
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD110N02R
    NTD110N02R
    ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e0
    no
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    235
    -
    NOT SPECIFIED
    3
    R-PSSO-G2
    1
    1.5W Ta 110W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    4.6m Ω @ 20A, 10V
    2V @ 250μA
    3.44pF @ 20V
    12.5A Ta 110A Tc
    28nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    110A
    120 mJ
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    TIN LEAD
    SINGLE
    unknown
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    24V
    12.5A
    0.0062Ohm
    24V
    -
    -
    NTD18N06LT4G vs NTD110N02R
  • NTD14N03R-001
    NTD14N03R-001
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2007
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    FET General Purpose Power
    25V
    MOSFET (Metal Oxide)
    -
    235
    14A
    NOT SPECIFIED
    3
    R-PSIP-T3
    1
    1.04W Ta 20.8W Tc
    Single
    ENHANCEMENT MODE
    1.56W
    DRAIN
    -
    N-Channel
    SWITCHING
    95m Ω @ 5A, 10V
    2V @ 250μA
    115pF @ 20V
    2.5A Ta
    1.8nC @ 5V
    27ns
    4.5V 10V
    ±20V
    27 ns
    9.6 ns
    2.5A
    -
    20V
    25V
    28A
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Tin/Lead (Sn/Pb)
    -
    not_compliant
    Not Qualified
    -
    -
    11.4A
    0.13Ohm
    -
    Through Hole
    8541.29.00.95
    NTD18N06LT4G vs NTD14N03R-001
  • NTD18N06LG
    NTD18N06LG
    ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    LOGIC LEVEL COMPATIBLE
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSSO-G2
    1
    2.1W Ta 55W Tj
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    65m Ω @ 9A, 5V
    2V @ 250μA
    675pF @ 25V
    18A Ta
    22nC @ 5V
    -
    5V
    ±15V
    -
    -
    -
    -
    -
    -
    54A
    72 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    MATTE TIN
    SINGLE
    -
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    18A
    0.065Ohm
    60V
    -
    -
    NTD18N06LT4G vs NTD18N06LG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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