ON Semiconductor NSBC143ZPDP6T5G
- Part Number:
- NSBC143ZPDP6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462040-NSBC143ZPDP6T5G
- Description:
- TRANS 2NPN PREBIAS 0.339W SOT963
- Datasheet:
- NSBC143ZPDP6T5G
ON Semiconductor NSBC143ZPDP6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC143ZPDP6T5G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-963
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO 0.1
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation339mW
- Terminal FormFLAT
- Base Part NumberNSBC1*
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)4.7k Ω
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC143ZPDP6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC143ZPDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC143ZPDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC143ZPDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC143ZPDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC143ZPDP6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 47K/4.7Kohm, Sot963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC143ZPDP6T5G
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 47K/4.7Kohm, Sot963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC143ZPDP6T5G
The three parts on the right have similar specifications to NSBC143ZPDP6T5G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryMax Power DissipationTerminal FormBase Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeTerminal FinishMountTransistor Element MaterialVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPolarity/Channel TypePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
NSBC143ZPDP6T5GACTIVE (Last Updated: 1 week ago)8 WeeksTinSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO 0.1BIP General Purpose Small Signal339mWFLATNSBC1*62NPN, PNPDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V804.7k Ω47k ΩNoROHS3 CompliantLead Free----------------
-
ACTIVE (Last Updated: 5 days ago)8 Weeks-Surface MountSOT-963YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signals339mWFLATNSBC1*62NPNDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 5mA, 10mA50V160100k Ω-NoROHS3 CompliantLead FreeTin (Sn)--------------
-
---Surface MountSOT-563, SOT-666--Tape & Reel (TR)2005e3-Obsolete1 (Unlimited)6EAR99--BUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal500mWFLATNSBC1*62--SWITCHING2 NPN - Pre-Biased (Dual)250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V-1k Ω1k Ω-Non-RoHS CompliantContains LeadTin (Sn)Surface MountSILICON50V260unknown100mA40R-PDSO-F6Not QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN---
-
---Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6---BUILT IN BIAS RESISTOR RATIO 2.14--FLAT-62--SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA--22k Ω47k Ω-ROHS3 Compliant-MATTE TIN-SILICON-260unknown-40R-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN500mW50V100mA
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
24 January 2024
ESP8266 Characteristics, Structure, Application Fields and Other Details
Ⅰ. What is ESP8266?Ⅱ. Characteristics of ESP8266 moduleⅢ. Hardware interface of ESP8266Ⅳ. Development method of ESP8266Ⅴ. Structure of ESP8266Ⅵ. What are the working modes of ESP8266?Ⅶ. What are... -
24 January 2024
ULN2803A Darlington Transistor Specifications, Characteristics, Working Principle and More
Ⅰ. Overview of ULN2803AⅡ. Specifications of ULN2803AⅢ. Characteristics of ULN2803AⅣ. Schematic diagram of ULN2803AⅤ. How does ULN2803A work?Ⅵ. Where is ULN2803A used?Ⅶ. Application circuit of ULN2803AⅧ. How to... -
25 January 2024
XC6206P332MR Voltage Regulator Manufacturer, Working principle, Characteristics and More
Ⅰ. Description of XC6206P332MRⅡ. Manufacturer of XC6206P332MRⅢ. Technical parameters of XC6206P332MRⅣ. Working principle of XC6206P332MRⅤ. Block diagram of XC6206P332MRⅥ. Characteristics of XC6206P332MRⅦ. Precautions for using XC6206P332MRⅧ. How to... -
25 January 2024
IRS2092S Audio Amplifier Technical Parameters, Alternatives, Applications and Other Details
Ⅰ. Overview of IRS2092SⅡ. Manufacturer of IRS2092SⅢ. Technical parameters of IRS2092SⅣ. How does IRS2092S work?Ⅴ. Circuit diagram of IRS2092SⅥ. Where is IRS2092S used?Ⅶ. What should we pay attention...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.