ON Semiconductor NSBC123EDXV6T1G
- Part Number:
- NSBC123EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462149-NSBC123EDXV6T1G
- Description:
- TRANS 2NPN PREBIAS 0.5W SOT563
- ECAD Model:
-
- Datasheet:
- NSBC123EDXV6T1G
ON Semiconductor NSBC123EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC123EDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberNSBC1*
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min8
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)2.2k Ω
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
Description: The ON Semiconductor NSBC123EDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. It is designed to provide a low-cost, space-saving solution for applications requiring two NPN transistors.
Features:
• Pre-biased for easy implementation
• Low-cost, space-saving solution
• Low power consumption
• High-speed switching
• High-voltage operation
• High-current capability
• High-temperature operation
• RoHS compliant
Applications: The NSBC123EDXV6T1G is suitable for a wide range of applications, including power management, motor control, and signal conditioning. It is also suitable for use in automotive, industrial, and consumer electronics applications.
Features:
• Pre-biased for easy implementation
• Low-cost, space-saving solution
• Low power consumption
• High-speed switching
• High-voltage operation
• High-current capability
• High-temperature operation
• RoHS compliant
Applications: The NSBC123EDXV6T1G is suitable for a wide range of applications, including power management, motor control, and signal conditioning. It is also suitable for use in automotive, industrial, and consumer electronics applications.
NSBC123EDXV6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
50V Dual NPN Bipolar Digital Transistor
Trans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC123EDXV6T1G
50V Dual NPN Bipolar Digital Transistor
Trans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC123EDXV6T1G
The three parts on the right have similar specifications to NSBC123EDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeFactory Lead TimeRadiation HardeningTransistor Element MaterialReach Compliance CodeJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBC123EDXV6T1GACTIVE (Last Updated: 4 days ago)Surface MountSOT-563, SOT-666YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLATNOT SPECIFIED100mANOT SPECIFIEDNSBC1*6Not Qualified2NPNDual357mWSWITCHING2 NPN - Pre-Biased (Dual)50V100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V82.2k Ω100mA2.2k ΩRoHS CompliantLead Free----------- -
ACTIVE (Last Updated: 5 days ago)Surface MountSOT-963YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signals-339mWFLAT---NSBC1*6-2NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 5mA, 10mA50V160100k Ω--ROHS3 CompliantLead Free8 WeeksNo--------
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-Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO 2.14---FLAT260-40-6COMMERCIAL2---SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA--22k Ω-47k ΩROHS3 Compliant---SILICONunknownR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN50V100mA
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ACTIVE (Last Updated: 2 days ago)Surface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO 0.047BIP General Purpose Small Signal-339mWFLAT---NSBC1*6-2NPN, PNPDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V802.2k Ω-47k ΩROHS3 CompliantLead Free8 WeeksNo--------
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