ON Semiconductor NSBC113EDXV6T1
- Part Number:
- NSBC113EDXV6T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068543-NSBC113EDXV6T1
- Description:
- TRANS 2NPN PREBIAS 0.5W SOT563
- Datasheet:
- NSBC114EDXV6Tx
ON Semiconductor NSBC113EDXV6T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC113EDXV6T1.
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishMATTE TIN
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- JESD-30 CodeR-PDSO-F6
- Qualification StatusCOMMERCIAL
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor Type2 NPN - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)1k Ω
- Resistor - Emitter Base (R2)1k Ω
- RoHS StatusROHS3 Compliant
NSBC113EDXV6T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC113EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC113EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC113EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC113EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC113EDXV6T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
NSBC SERIES: Dual NPN Bias Resistor Transistors in SOT-563
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS 2NPN PREBIAS 0.5W SOT563
NSBC SERIES: Dual NPN Bias Resistor Transistors in SOT-563
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS 2NPN PREBIAS 0.5W SOT563
The three parts on the right have similar specifications to NSBC113EDXV6T1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusMountNumber of PinsPublishedECCN CodeMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPolarityElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinContinuous Collector CurrentLead FreeLifecycle StatusFactory Lead TimeREACH SVHCRadiation HardeningView Compare
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NSBC113EDXV6T1Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTOR RATIO IS 1FLAT240unknown406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGNPN2 NPN - Pre-Biased (Dual)3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V100mA1k Ω1k ΩROHS3 Compliant--------------------------
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Surface MountSOT-563, SOT-666--Tape & Reel (TR)e3-Obsolete1 (Unlimited)6Tin (Sn)-FLAT260unknown406-Not Qualified2--SWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 300μA, 10mA--2.2k Ω47k ΩNon-RoHS CompliantSurface Mount62008EAR99150°C-55°CBIP General Purpose Small Signal50V500mW100mANSBC1*PNPDual357mW250mV100mA50V50V80100mAContains Lead----
-
Surface MountSOT-963YES-Tape & Reel (TR)e3yesActive1 (Unlimited)6Tin (Sn)BUILT IN BIAS RESISTORFLATNOT SPECIFIED-NOT SPECIFIED6-Not Qualified2--SWITCHING-2 NPN - Pre-Biased (Dual)160 @ 5mA 10V500nA250mV @ 1mA, 10mA--2.2k Ω-ROHS3 Compliant-62010EAR99150°C-55°CBIP General Purpose Small Signal-339mW-NSBC1*NPNDual-50V100mA50V-160-Lead FreeACTIVE (Last Updated: 2 days ago)8 Weeks--
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Surface MountSOT-963YES-Tape & Reel (TR)e3yesActive1 (Unlimited)6Tin (Sn)BUILT IN BIAS RESISTOR RATIOFLAT---6--2--SWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)160 @ 5mA 10V500nA250mV @ 1mA, 10mA--2.2k Ω-ROHS3 Compliant-62008EAR99150°C-55°CBIP General Purpose Small Signal-339mW--NPN, PNPDual231mW50V100mA50V-160100mALead FreeACTIVE (Last Updated: 1 week ago)8 WeeksNo SVHCNo
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