Fairchild/ON Semiconductor NDS9952A

Name: NDS9952A
Brand: Fairchild/ON Semiconductor
SKU: 2473612-NDS9952A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS9952A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473612-NDS9952A

Description:: MOSFET N/P-CH 30V 8SOIC

ECAD Model:

Datasheet:: NDS9952A

Specifications

Fairchild/ON Semiconductor NDS9952A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9952A.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
80MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Form
GULL WING
Current Rating
2.9A
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.7A 2.9A
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
21ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
8 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
3.7A
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
15A
Dual Supply Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.7 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.

NDS9952A Features
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
High density cell architecture or a very low RDS (ON).
a surface mount package with high power and current handling capacity.
Surface-mount MOSFET with dual (N and P) channels.

NDS9952A Applications
Switching applications

NDS9952A More Descriptions

Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R
Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to NDS9952A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

FET Technology

FET Feature

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Published

Voltage - Rated DC

Turn On Delay Time

Power - Max

Drain to Source Voltage (Vdss)

Avalanche Energy Rating (Eas)

Height

Length

Width

Supplier Device Package

View Compare
NDS9952A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

80MOhm

Tin (Sn)

Other Transistors

900mW

GULL WING

2.9A

2

Dual

ENHANCEMENT MODE

2W

N and P-Channel

SWITCHING

80m Ω @ 1A, 10V

2.8V @ 250μA

320pF @ 10V

3.7A 2.9A

25nC @ 10V

21ns

N-CHANNEL AND P-CHANNEL

8 ns

21 ns

3.7A

1.7V

20V

30V

15A

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.7 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
NDS9948

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

20 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

-

EAR99

-

Tin (Sn)

Other Transistors

2W

GULL WING

-2.3A

2

Dual

ENHANCEMENT MODE

2W

2 P-Channel (Dual)

SWITCHING

250m Ω @ 2.3A, 10V

3V @ 250μA

394pF @ 30V

-

13nC @ 10V

9ns

-

3 ns

16 ns

2.3A

-1.5V

20V

-60V

10A

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-1.5 V

No SVHC

No

ROHS3 Compliant

Lead Free

PowerTrench®

2002

-60V

6 ns

900mW

60V

15 mJ

1.5mm

5mm

4mm

-

NDS9952A vs NDS9948
NDS9958

Fairchild/ON Semiconductor

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

N and P-Channel

-

100mOhm @ 3.5A, 10V

3V @ 250μA

525pF @ 10V

3.5A

30nC @ 10V

-

-

-

-

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

-

-

-

900mW

20V

-

-

-

-

8-SOIC

NDS9952A vs NDS9958
NDS9959

Fairchild/ON Semiconductor

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

900mW

-

2A

2

Dual

-

2W

2 N-Channel (Dual)

-

300m Ω @ 1.5A, 10V

4V @ 250μA

250pF @ 25V

-

15nC @ 10V

8ns

-

11 ns

9 ns

2A

-

20V

50V

-

-

-

Standard

-

-

-

RoHS Compliant

Lead Free

-

1998

50V

-

-

-

-

-

-

-

-

NDS9952A vs NDS9959