Fairchild/ON Semiconductor NDS9953A
- Part Number:
- NDS9953A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585948-NDS9953A
- Description:
- MOSFET 2P-CH 30V 2.9A 8-SOIC
- ECAD Model:
-
- Datasheet:
- NDS9953A
Fairchild/ON Semiconductor NDS9953A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9953A.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Voltage - Rated DC-30V
- Max Power Dissipation900mW
- Current Rating-2.9A
- Number of Elements2
- Row Spacing6.3 mm
- Element ConfigurationDual
- Power Dissipation2W
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs130m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time21ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)2.9A
- Threshold Voltage-1.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- FET FeatureLogic Level Gate
- Nominal Vgs-1.6 V
- Width4.05mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NDS9953A Description
These P-Channel enhanced power field effect transistors are produced using Xiantong's proprietary high cell density DMOS technology. This high-density process is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
NDS9953A Features
-2.9A，-30VR=0.13@V=-10V. High density cell design for extremely low Rpsion High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9953A Applications
low-voltage applications
NDS9953A Features
-2.9A，-30VR=0.13@V=-10V. High density cell design for extremely low Rpsion High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9953A Applications
low-voltage applications
NDS9953A More Descriptions
Transistor MOSFET Array Dual P-CH 30V 2.9A 8-Pin SOIC T/R - Bulk
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 25nC @ 10V 2.9A 900mW 8ns
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:2.9A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Power Dissipation Pd:1.6W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:NDS9953A; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 25nC @ 10V 2.9A 900mW 8ns
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:2.9A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Power Dissipation Pd:1.6W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:NDS9953A; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to NDS9953A.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsRow SpacingElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET FeatureNominal VgsWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackagePower - MaxCurrent - Continuous Drain (Id) @ 25°CWeightView Compare
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NDS9953ASurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)SMD/SMT-30V900mW-2.9A26.3 mmDual2W2 P-Channel (Dual)130m Ω @ 1A, 10V2.8V @ 250μA350pF @ 10V25nC @ 10V21ns30V8 ns21 ns2.9A-1.6V20V-30V-30VLogic Level Gate-1.6 V4.05mmNo SVHCRoHS CompliantLead Free----- -
-Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)--------N and P-Channel100mOhm @ 3.5A, 10V3V @ 250μA525pF @ 10V30nC @ 10V-20V-------Logic Level Gate-----8-SOIC900mW3.5A-
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)--------N and P-Channel125mOhm @ 3A, 10V-525pF @ 10V27nC @ 10V-20V-------Logic Level Gate---Non-RoHS Compliant-8-SOIC900mW3A 2.8A-
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)-50V900mW2A2-Dual2W2 N-Channel (Dual)300m Ω @ 1.5A, 10V4V @ 250μA250pF @ 25V15nC @ 10V8ns-11 ns9 ns2A-20V50V-Standard---RoHS CompliantLead Free---230.4mg
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