Fairchild/ON Semiconductor NDS9959
- Part Number:
- NDS9959
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848330-NDS9959
- Description:
- MOSFET 2N-CH 50V 2A 8-SOIC
- ECAD Model:
-
- Datasheet:
- NDS9959
Fairchild/ON Semiconductor NDS9959 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9959.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight230.4mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC50V
- Max Power Dissipation900mW
- Current Rating2A
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation2W
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs300m Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Rise Time8ns
- Fall Time (Typ)11 ns
- Turn-Off Delay Time9 ns
- Continuous Drain Current (ID)2A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage50V
- FET FeatureStandard
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NDS9959 Description
These N-channel enhanced power field effect transistors are produced with high cell density unique to Fauchard. DMOS technology. This high-density process is tailored to minimize on-resistance, provides excellent switching performance and can withstand high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications that require fast switching, low on-line power consumption and anti-transient, such as DC motor control and DC/DC conversion.
NDS9959 Features
2.0A50VRs=0.3@V=10V High density cell design for extremely low RpsoN High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9959 Applications DC motor control DC/DC conversion
NDS9959 Features
2.0A50VRs=0.3@V=10V High density cell design for extremely low RpsoN High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package NDS9959 Applications DC motor control DC/DC conversion
NDS9959 More Descriptions
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 15nC @ 10V 2A 900mW 11ns
Transistor MOSFET Array Dual N-CH 50V 2A 8-Pin SOIC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Transistor MOSFET Array Dual N-CH 50V 2A 8-Pin SOIC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
The three parts on the right have similar specifications to NDS9959.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureRoHS StatusLead FreeLifecycle StatusFactory Lead TimeTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal FormOperating ModeTurn On Delay TimePower - MaxTransistor ApplicationDrain to Source Voltage (Vdss)Threshold VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CView Compare
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NDS9959Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mg-55°C~150°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)50V900mW2A2Dual2W2 N-Channel (Dual)300m Ω @ 1.5A, 10V4V @ 250μA250pF @ 25V15nC @ 10V8ns11 ns9 ns2A20V50VStandardRoHS CompliantLead Free----------------------------- -
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~175°C TJTape & Reel (TR)2002Active1 (Unlimited)-60V2W-2.3A2Dual2W2 P-Channel (Dual)250m Ω @ 2.3A, 10V3V @ 250μA394pF @ 30V13nC @ 10V9ns3 ns16 ns2.3A20V-60VLogic Level GateROHS3 CompliantLead FreeACTIVE (Last Updated: 3 days ago)20 WeeksSILICONPowerTrench®e3yes8EAR99Tin (Sn)Other TransistorsGULL WINGENHANCEMENT MODE6 ns900mWSWITCHING60V-1.5V10A15 mJMETAL-OXIDE SEMICONDUCTOR-1.5 V1.5mm5mm4mmNo SVHCNo--
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-Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)------N and P-Channel100mOhm @ 3.5A, 10V3V @ 250μA525pF @ 10V30nC @ 10V------Logic Level Gate---------------900mW-20V----------8-SOIC3.5A
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)------N and P-Channel125mOhm @ 3A, 10V-525pF @ 10V27nC @ 10V------Logic Level GateNon-RoHS Compliant--------------900mW-20V----------8-SOIC3A 2.8A
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