Fairchild/ON Semiconductor NDS9948
- Part Number:
- NDS9948
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585672-NDS9948
- Description:
- MOSFET 2P-CH 60V 2.3A 8-SOIC
- Datasheet:
- NDS9948
Fairchild/ON Semiconductor NDS9948 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9948.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Current Rating-2.3A
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time6 ns
- Power - Max900mW
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 2.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds394pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time9ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)2.3A
- Threshold Voltage-1.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Pulsed Drain Current-Max (IDM)10A
- Avalanche Energy Rating (Eas)15 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs-1.5 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NDS9948 Description
This P-channel MOSFET is a rugged gate version of on Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of gate drive rated voltages (4.5V-20V).
NDS9948 Applications
? Power management ? Load switch ? Battery protection NDS9948 Features
? –2.3 A, –60 V RDS(ON) = 250 m? @ VGS = –10 V RDS(ON) = 500 m? @ VGS = –4.5 V ? Low gate charge (9nC typical) ? Fast switching speed ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability
This P-channel MOSFET is a rugged gate version of on Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of gate drive rated voltages (4.5V-20V).
NDS9948 Applications
? Power management ? Load switch ? Battery protection NDS9948 Features
? –2.3 A, –60 V RDS(ON) = 250 m? @ VGS = –10 V RDS(ON) = 500 m? @ VGS = –4.5 V ? Low gate charge (9nC typical) ? Fast switching speed ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability
NDS9948 More Descriptions
Transistor MOSFET Array Dual P-CH 60V 2.3A 8-Pin SOIC T/R - Tape and Reel
Dual 60V P-Channel PowerTrench® MOSFET -2.3A, 250mΩ
Dual P-Channel 60 V 250 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).
DUAL P CH MOSFET, -60V, 2.3A, SOIC; Tran; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.3A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:-10V
Dual 60V P-Channel PowerTrench® MOSFET -2.3A, 250mΩ
Dual P-Channel 60 V 250 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).
DUAL P CH MOSFET, -60V, 2.3A, SOIC; Tran; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.3A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to NDS9948.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CView Compare
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NDS9948ACTIVE (Last Updated: 3 days ago)20 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2002e3yesActive1 (Unlimited)8EAR99Tin (Sn)Other Transistors-60V2WGULL WING-2.3A2DualENHANCEMENT MODE2W6 ns900mW2 P-Channel (Dual)SWITCHING250m Ω @ 2.3A, 10V3V @ 250μA394pF @ 30V13nC @ 10V9ns60V3 ns16 ns2.3A-1.5V20V-60V10A15 mJMETAL-OXIDE SEMICONDUCTORLogic Level Gate-1.5 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free---
-
---Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)-------------900mWN and P-Channel-100mOhm @ 3.5A, 10V3V @ 250μA525pF @ 10V30nC @ 10V-20V---------Logic Level Gate--------8-SOIC3.5A
-
---Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)-------------900mWN and P-Channel-125mOhm @ 3A, 10V-525pF @ 10V27nC @ 10V-20V---------Logic Level Gate------Non-RoHS Compliant-8-SOIC3A 2.8A
-
--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mg--55°C~150°C TJTape & Reel (TR)-1998--Obsolete1 (Unlimited)----50V900mW-2A2Dual-2W--2 N-Channel (Dual)-300m Ω @ 1.5A, 10V4V @ 250μA250pF @ 25V15nC @ 10V8ns-11 ns9 ns2A-20V50V---Standard------RoHS CompliantLead Free--
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