NXP USA Inc. MRF6VP3450HR5

Name: MRF6VP3450HR5
Brand: NXP USA Inc.
SKU: 2847929-MRF6VP3450HR5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF6VP3450HR5

Manufacturer:: NXP USA Inc.

Ventron No:: 2847929-MRF6VP3450HR5

Description:: FET RF 2CH 110V 860MHZ NI-1230

ECAD Model:

Datasheet:: MRF6VP3450HR5

Part Pictures

Specifications

NXP USA Inc. MRF6VP3450HR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6VP3450HR5.

Factory Lead Time
10 Weeks
Package / Case
NI-1230
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated
110V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
860MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MRF6VP3450
JESD-30 Code
R-CDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
1.4A
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
22.5dB
DS Breakdown Voltage-Min
110V
Power - Output
90W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant

Description

MRF6VP3450HR5 Description MRF6VP3450HR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF6VP3450HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6VP3450HR5 has the common source configuration. MRF6VP3450HR5 Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging for lower junction temperatures MRF6VP3450HR5 Applications ISM applications DC large signal applications

MRF6VP3450HR5 More Descriptions

Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W
RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to MRF6VP3450HR5.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Surface Mount

Transistor Element Material

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Voltage - Rated

HTS Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Current - Test

Transistor Application

Polarity/Channel Type

Transistor Type

Gain

DS Breakdown Voltage-Min

Power - Output

FET Technology

Voltage - Test

RoHS Status

View Compare
MRF6VP3450HR5

NXP USA Inc.

10 Weeks

NI-1230

YES

SILICON

Tape & Reel (TR)

2010

Active

Not Applicable

4

EAR99

110V

8541.29.00.75

FET General Purpose Power

FLAT

260

860MHz

40

MRF6VP3450

R-CDFM-F4

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

1.4A

AMPLIFIER

N-CHANNEL

LDMOS (Dual)

22.5dB

110V

90W

METAL-OXIDE SEMICONDUCTOR

50V

ROHS3 Compliant

-
MRF6S21060MBR1

NXP USA Inc.

-

TO-272-4

-

-

Tape & Reel (TR)

2011

Obsolete

3 (168 Hours)

-

-

68V

-

-

-

-

2.12GHz

-

MRF6S21060

-

-

-

-

-

-

-

610mA

-

-

LDMOS

15.5dB

-

14W

-

28V

Non-RoHS Compliant

MRF6VP3450HR5 vs MRF6S21060MBR1
MRF6V13250HR3

NXP USA Inc.

-

SOT-957A

-

-

Tape & Reel (TR)

2011

Discontinued

3 (168 Hours)

-

EAR99

120V

-

-

-

-

1.3GHz

-

MRF6V13250

-

-

-

-

-

-

-

100mA

-

-

LDMOS

22.7dB

-

250W

-

50V

ROHS3 Compliant

MRF6VP3450HR5 vs MRF6V13250HR3
MRF6S19140HR3

NXP USA Inc.

-

NI-880

-

-

Tape & Reel (TR)

2007

Obsolete

3 (168 Hours)

-

EAR99

68V

-

-

-

-

1.93GHz~1.99GHz

-

MRF6S19140

-

-

-

-

-

-

-

1.15A

-

-

LDMOS

16dB

-

29W

-

28V

ROHS3 Compliant

MRF6VP3450HR5 vs MRF6S19140HR3