NXP USA Inc. MRF6VP121KHR5
- Part Number:
- MRF6VP121KHR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477518-MRF6VP121KHR5
- Description:
- FET RF 2CH 110V 1.03GHZ NI1230H
- ECAD Model:
-
- Datasheet:
- MRF6VP121KHR5
NXP USA Inc. MRF6VP121KHR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6VP121KHR5.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2010
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated110V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency1.03GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF6VP121
- JESD-30 CodeR-CDFM-F4
- Operating Temperature (Max)200°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test150mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain20dB
- DS Breakdown Voltage-Min110V
- Power - Output1000W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRF6VP121KHR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6VP121KHR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6VP121KHR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6VP121KHR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6VP121KHR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6VP121KHR5 More Descriptions
Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
RF Power Transistor,965 to 1215 MHz, 1000 W, Typ Gain in dB is 20 @ 1030 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
RF MOSFET Transistors VHV6 1KW 50V NI1230H
FET RF 2CH 110V 1.03GHZ NI1230H
RF 2-ELEMENT, L BAND, N-CHANNEL
RF Power Transistor,965 to 1215 MHz, 1000 W, Typ Gain in dB is 20 @ 1030 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
RF MOSFET Transistors VHV6 1KW 50V NI1230H
FET RF 2CH 110V 1.03GHZ NI1230H
RF 2-ELEMENT, L BAND, N-CHANNEL
The three parts on the right have similar specifications to MRF6VP121KHR5.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusTerminal PositionQualification StatusJESD-609 CodeTerminal FinishAdditional FeatureView Compare
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MRF6VP121KHR510 WeeksNI-1230YESSILICONTape & Reel (TR)2010Not For New DesignsNot Applicable4EAR99110V8541.29.00.75FET General Purpose PowerFLAT2601.03GHz40MRF6VP121R-CDFM-F4200°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE150mAAMPLIFIERN-CHANNELLDMOS (Dual)20dB110V1000WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant------ -
-NI-880--Tape & Reel (TR)2007Obsolete3 (168 Hours)-EAR9968V----1.93GHz~1.99GHz-MRF6S19140------1.15A--LDMOS16dB-29W-28VROHS3 Compliant-----
-
-NI-880YESSILICONTape & Reel (TR)2012Obsolete3 (168 Hours)2EAR9968V8541.29.00.75-FLAT2602.39GHz40MRF6S24140R-CDFM-F2225°C1SINGLEENHANCEMENT MODESOURCE1.3A-N-CHANNELLDMOS15.2dB68V28WMETAL-OXIDE SEMICONDUCTOR28VROHS3 CompliantDUALNot Qualified---
-
10 WeeksTO-272BBYESSILICONTape & Reel (TR)2006Not For New Designs3 (168 Hours)4EAR99110V8541.29.00.75FET General Purpose PowerFLAT260860MHz40MRF6V3090R-PDFM-F4225°C1SINGLEENHANCEMENT MODESOURCE350mAAMPLIFIERN-CHANNELLDMOS22dB115V18WMETAL-OXIDE SEMICONDUCTOR50VROHS3 CompliantDUALNot Qualifiede3Matte Tin (Sn)ESD PROTECTION
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