NXP USA Inc. MRF6V2300NR1

Name: MRF6V2300NR1
Brand: NXP USA Inc.
SKU: 2477528-MRF6V2300NR1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF6V2300NR1

Manufacturer:: NXP USA Inc.

Ventron No:: 2477528-MRF6V2300NR1

Description:: FET RF 110V 220MHZ TO-270-4

ECAD Model:

Datasheet:: MRF6V2300N(B)R1

Specifications

NXP USA Inc. MRF6V2300NR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V2300NR1.

Package / Case
TO-270AB
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
110V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
220MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MRF6V2300
JESD-30 Code
R-PDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
900mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
25.5dB
DS Breakdown Voltage-Min
110V
Power - Output
300W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
Non-RoHS Compliant

Description

MRF6V2300NR1 Description
Designed primarily for drivers and large-signal CW output applications at up to 600 MHz. Unmatched devices are appropriate for use in industrial, medicinal, and scientific applications. With this technology, we hope to reduce conduction loss, improve switching efficiency, increase dv/dt rate, and increase avalanche energy.

MRF6V2300NR1 Features
? Displays series equivalent large-signal impedance parameters
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Plastic Package with 225°C Capability
? RoHS conformant
? on reel-to-reel tape. 500 Units per 44 mm, 13 inch Reel, R1 Suffix.

MRF6V2300NR1 Applications
Switching applications

MRF6V2300NR1 More Descriptions

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R
RF ULTRA HIGH FREQUENCY BAND, N-
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to MRF6V2300NR1.

Image

Part Number

Manufacturer

Package / Case

Surface Mount

Transistor Element Material

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Current - Test

Transistor Application

Polarity/Channel Type

Transistor Type

Gain

DS Breakdown Voltage-Min

Power - Output

FET Technology

Voltage - Test

RoHS Status

Factory Lead Time

Power Dissipation-Max (Abs)

Additional Feature

View Compare
MRF6V2300NR1

NXP USA Inc.

TO-270AB

YES

SILICON

Tape & Reel (TR)

2006

e3

Obsolete

3 (168 Hours)

4

EAR99

Tin (Sn)

110V

8541.29.00.75

FET General Purpose Power

DUAL

FLAT

260

not_compliant

220MHz

40

MRF6V2300

R-PDFM-F4

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

900mA

AMPLIFIER

N-CHANNEL

LDMOS

25.5dB

110V

300W

METAL-OXIDE SEMICONDUCTOR

50V

Non-RoHS Compliant

-

-

-

-
MRF6V13250HSR5

NXP USA Inc.

NI-780S

YES

SILICON

Tape & Reel (TR)

2011

-

Active

Not Applicable

2

EAR99

-

120V

8541.29.00.75

FET General Purpose Power

DUAL

FLAT

260

-

1.3GHz

40

MRF6V13250

R-CDFP-F2

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

100mA

AMPLIFIER

N-CHANNEL

LDMOS

22.7dB

120V

250W

METAL-OXIDE SEMICONDUCTOR

50V

ROHS3 Compliant

10 Weeks

476W

-

MRF6V2300NR1 vs MRF6V13250HSR5
MRF6V13250HR3

NXP USA Inc.

SOT-957A

-

-

Tape & Reel (TR)

2011

-

Discontinued

3 (168 Hours)

-

EAR99

-

120V

-

-

-

-

-

-

1.3GHz

-

MRF6V13250

-

-

-

-

-

-

-

100mA

-

-

LDMOS

22.7dB

-

250W

-

50V

ROHS3 Compliant

-

-

-

MRF6V2300NR1 vs MRF6V13250HR3
MRF6V3090NBR1

NXP USA Inc.

TO-272BB

YES

SILICON

Tape & Reel (TR)

2006

e3

Not For New Designs

3 (168 Hours)

4

EAR99

Matte Tin (Sn)

110V

8541.29.00.75

FET General Purpose Power

DUAL

FLAT

260

-

860MHz

40

MRF6V3090

R-PDFM-F4

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

350mA

AMPLIFIER

N-CHANNEL

LDMOS

22dB

115V

18W

METAL-OXIDE SEMICONDUCTOR

50V

ROHS3 Compliant

10 Weeks

-

ESD PROTECTION

MRF6V2300NR1 vs MRF6V3090NBR1