NXP USA Inc. MRF6V2010NBR1

Name: MRF6V2010NBR1
Brand: NXP USA Inc.
SKU: 3069882-MRF6V2010NBR1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF6V2010NBR1

Manufacturer:: NXP USA Inc.

Ventron No:: 3069882-MRF6V2010NBR1

Description:: FET RF 110V 220MHZ TO272-2

ECAD Model:

Datasheet:: MRF6V2010NBR1

Specifications

NXP USA Inc. MRF6V2010NBR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V2010NBR1.

Factory Lead Time
10 Weeks
Package / Case
TO-272BC
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
110V
HTS Code
8541.29.00.75
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MRF6V2010
JESD-30 Code
R-PDFM-F2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
30mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
23.9dB
DS Breakdown Voltage-Min
110V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
Non-RoHS Compliant

Description

MRF6V2010NBR1 Description
Principally intended for CW large-signal output and driver applications at up to 450 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.

MRF6V2010NBR1 Features
Characterized by parameters for the series equivalent of large-signal impedance qualified up to 50 VDD operations in total Integrated ESD defense polypropylene container capable of 225°C

MRF6V2010NBR1 Applications
Switching applications

MRF6V2010NBR1 More Descriptions

Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2FNXP Semiconductors SCT
23.9 dB Compliant Screw, Surface Mount 1.196095 g 220 MHz Contains Lead Tape and Reel TO-270-2
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
RF MOSFET Transistors VHV6 10W TO272-2N
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to MRF6V2010NBR1.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Surface Mount

Transistor Element Material

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Current - Test

Transistor Application

Polarity/Channel Type

Transistor Type

Gain

DS Breakdown Voltage-Min

Power - Output

FET Technology

Voltage - Test

RoHS Status

View Compare
MRF6V2010NBR1

NXP USA Inc.

10 Weeks

TO-272BC

YES

SILICON

Tape & Reel (TR)

2006

e3

Obsolete

3 (168 Hours)

2

EAR99

Matte Tin (Sn)

110V

8541.29.00.75

DUAL

FLAT

260

220MHz

40

MRF6V2010

R-PDFM-F2

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

30mA

AMPLIFIER

N-CHANNEL

LDMOS

23.9dB

110V

10W

METAL-OXIDE SEMICONDUCTOR

50V

Non-RoHS Compliant

-
MRF6S21060MBR1

NXP USA Inc.

-

TO-272-4

-

-

Tape & Reel (TR)

2011

-

Obsolete

3 (168 Hours)

-

-

-

68V

-

-

-

-

2.12GHz

-

MRF6S21060

-

-

-

-

-

-

-

610mA

-

-

LDMOS

15.5dB

-

14W

-

28V

Non-RoHS Compliant

MRF6V2010NBR1 vs MRF6S21060MBR1
MRF6S24140HR3

NXP USA Inc.

-

NI-880

YES

SILICON

Tape & Reel (TR)

2012

-

Obsolete

3 (168 Hours)

2

EAR99

-

68V

8541.29.00.75

DUAL

FLAT

260

2.39GHz

40

MRF6S24140

R-CDFM-F2

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

1.3A

-

N-CHANNEL

LDMOS

15.2dB

68V

28W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

MRF6V2010NBR1 vs MRF6S24140HR3
MRF6V13250HSR3

NXP USA Inc.

-

NI-780S

-

-

Tape & Reel (TR)

2011

-

Discontinued

3 (168 Hours)

-

EAR99

-

120V

-

-

-

-

1.3GHz

-

MRF6V13250

-

-

-

-

-

-

-

100mA

-

-

LDMOS

22.7dB

-

250W

-

50V

ROHS3 Compliant

MRF6V2010NBR1 vs MRF6V13250HSR3