NXP USA Inc. MRF6V12500HR3

Name: MRF6V12500HR3
Brand: NXP USA Inc.
SKU: 3585945-MRF6V12500HR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF6V12500HR3

Manufacturer:: NXP USA Inc.

Ventron No:: 3585945-MRF6V12500HR3

Description:: FET RF 110V 1.03GHZ NI-780H

ECAD Model:

Datasheet:: MRF6V12500HR3

Specifications

NXP USA Inc. MRF6V12500HR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V12500HR3.

Package / Case
SOT-957A
Supplier Device Package
NI-780H-2L
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
110V
Frequency
1.03GHz
Base Part Number
MRF6V12500
Current - Test
200mA
Transistor Type
LDMOS
Gain
19.7dB
Power - Output
500W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant

Description

MRF6V12500HR3 Description
These RF power transistors are made for devices like secondary radars for air traffic control, transponders, and distance measurement equipment (DME) that operate at frequencies between 960 and 1215 MHz. These gadgets can be used in pulse applications, such as Mode S ELM.

MRF6V12500HR3 Features
Series equivalent large-signal impedance parameters are used to describe it.
Internally Matched for User-Friendliness and Qualified for a Maximum of 50 VDD Operations
Integrated ESD Defense
Improved Class C Operation through Extended Negative Gate-Source Voltage Range

MRF6V12500HR3 Applications
Switching applications

MRF6V12500HR3 More Descriptions

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
19.7 dB Compliant Screw 6.424994 g 1.03 GHz Tape & Reel Halogen Free 500 W
Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R

Product Comparison

The three parts on the right have similar specifications to MRF6V12500HR3.

Image

Part Number

Manufacturer

Package / Case

Supplier Device Package

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated

Frequency

Base Part Number

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

ECCN Code

Factory Lead Time

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

View Compare
MRF6V12500HR3

NXP USA Inc.

SOT-957A

NI-780H-2L

Tape & Reel (TR)

2010

Discontinued

3 (168 Hours)

110V

1.03GHz

MRF6V12500

200mA

LDMOS

19.7dB

500W

50V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MRF6V13250HR3

NXP USA Inc.

SOT-957A

-

Tape & Reel (TR)

2011

Discontinued

3 (168 Hours)

120V

1.3GHz

MRF6V13250

100mA

LDMOS

22.7dB

250W

50V

ROHS3 Compliant

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MRF6V12500HR3 vs MRF6V13250HR3
MRF6V13250HSR3

NXP USA Inc.

NI-780S

-

Tape & Reel (TR)

2011

Discontinued

3 (168 Hours)

120V

1.3GHz

MRF6V13250

100mA

LDMOS

22.7dB

250W

50V

ROHS3 Compliant

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MRF6V12500HR3 vs MRF6V13250HSR3
MRF6V3090NBR1

NXP USA Inc.

TO-272BB

-

Tape & Reel (TR)

2006

Not For New Designs

3 (168 Hours)

110V

860MHz

MRF6V3090

350mA

LDMOS

22dB

18W

50V

ROHS3 Compliant

EAR99

10 Weeks

YES

SILICON

e3

4

Matte Tin (Sn)

ESD PROTECTION

8541.29.00.75

FET General Purpose Power

DUAL

FLAT

260

40

R-PDFM-F4

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

AMPLIFIER

N-CHANNEL

115V

METAL-OXIDE SEMICONDUCTOR

MRF6V12500HR3 vs MRF6V3090NBR1