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MRF6V10250HSR3

NXP USA Inc. MRF6V10250HSR3

Part Number:
MRF6V10250HSR3
Manufacturer:
NXP USA Inc.
Ventron No:
2477149-MRF6V10250HSR3
Description:
FET RF 100V 1.09GHZ NI780S
ECAD Model:
Datasheet:
MRF6V10250HSR3

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Specifications
NXP USA Inc. MRF6V10250HSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V10250HSR3.
  • Package / Case
    NI-780S
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Voltage - Rated
    100V
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Frequency
    1.09GHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-CDFP-F2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    250mA
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    21dB
  • DS Breakdown Voltage-Min
    100V
  • Power - Output
    250W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    50V
  • RoHS Status
    ROHS3 Compliant
Description
MRF6V10250HSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6V10250HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6V10250HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6V10250HSR3 More Descriptions
MOSFET RF N-CH NI780S
IC REG LINEAR 1.5V 80MA SC88A
FET RF 100V 1.09GHZ NI780S
Product Comparison
The three parts on the right have similar specifications to MRF6V10250HSR3.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Voltage - Rated
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Current - Test
    Polarity/Channel Type
    Transistor Type
    Gain
    DS Breakdown Voltage-Min
    Power - Output
    FET Technology
    Voltage - Test
    RoHS Status
    Factory Lead Time
    ECCN Code
    HTS Code
    Subcategory
    Base Part Number
    Qualification Status
    Operating Temperature (Max)
    Transistor Application
    Power Dissipation-Max (Abs)
    JESD-609 Code
    Terminal Finish
    Reach Compliance Code
    View Compare
  • MRF6V10250HSR3
    MRF6V10250HSR3
    NXP USA Inc.
    NI-780S
    YES
    SILICON
    Tape & Reel (TR)
    2010
    Obsolete
    1 (Unlimited)
    2
    100V
    DUAL
    FLAT
    NOT SPECIFIED
    1.09GHz
    NOT SPECIFIED
    R-CDFP-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    250mA
    N-CHANNEL
    LDMOS
    21dB
    100V
    250W
    METAL-OXIDE SEMICONDUCTOR
    50V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MRF6V13250HSR5
    MRF6V13250HSR5
    NXP USA Inc.
    NI-780S
    YES
    SILICON
    Tape & Reel (TR)
    2011
    Active
    Not Applicable
    2
    120V
    DUAL
    FLAT
    260
    1.3GHz
    40
    R-CDFP-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    100mA
    N-CHANNEL
    LDMOS
    22.7dB
    120V
    250W
    METAL-OXIDE SEMICONDUCTOR
    50V
    ROHS3 Compliant
    10 Weeks
    EAR99
    8541.29.00.75
    FET General Purpose Power
    MRF6V13250
    Not Qualified
    225°C
    AMPLIFIER
    476W
    -
    -
    -
    MRF6V10250HSR3 vs MRF6V13250HSR5
  • MRF6S9125MBR1
    MRF6S9125MBR1
    NXP USA Inc.
    TO-272-4
    -
    -
    Tape & Reel (TR)
    2006
    Obsolete
    3 (168 Hours)
    -
    68V
    -
    -
    -
    880MHz
    -
    -
    -
    -
    -
    -
    950mA
    -
    LDMOS
    20.2dB
    -
    27W
    -
    28V
    Non-RoHS Compliant
    -
    -
    -
    -
    MRF6S9125
    -
    -
    -
    -
    e0
    Tin/Lead (Sn/Pb)
    not_compliant
    MRF6V10250HSR3 vs MRF6S9125MBR1
  • MRF6S24140HR3
    MRF6S24140HR3
    NXP USA Inc.
    NI-880
    YES
    SILICON
    Tape & Reel (TR)
    2012
    Obsolete
    3 (168 Hours)
    2
    68V
    DUAL
    FLAT
    260
    2.39GHz
    40
    R-CDFM-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    1.3A
    N-CHANNEL
    LDMOS
    15.2dB
    68V
    28W
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    -
    EAR99
    8541.29.00.75
    -
    MRF6S24140
    Not Qualified
    225°C
    -
    -
    -
    -
    -
    MRF6V10250HSR3 vs MRF6S24140HR3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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