NXP USA Inc. MRF6S21190HSR5
- Part Number:
- MRF6S21190HSR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477818-MRF6S21190HSR5
- Description:
- FET RF 68V 2.17GHZ NI880S
- Datasheet:
- MRF6S21190HSR5
NXP USA Inc. MRF6S21190HSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6S21190HSR5.
- Package / CaseNI-880S
- PackagingTape & Reel (TR)
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Voltage - Rated68V
- Frequency2.11GHz~2.17GHz
- Base Part NumberMRF6S21190
- Current - Test1.6A
- Transistor TypeLDMOS
- Gain16dB
- Power - Output54W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF6S21190HSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6S21190HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6S21190HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6S21190HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6S21190HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6S21190HSR5 More Descriptions
Trans MOSFET N-CH 68V 3-Pin NI-880S T/R
RF MOSFET Transistors HV6 2.1GHZ 54W NI880S
IC DRIVER HI/LO 600V 10DFN
FET RF 68V 2.17GHZ NI880S
RF MOSFET Transistors HV6 2.1GHZ 54W NI880S
IC DRIVER HI/LO 600V 10DFN
FET RF 68V 2.17GHZ NI880S
The three parts on the right have similar specifications to MRF6S21190HSR5.
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ImagePart NumberManufacturerPackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - RatedFrequencyBase Part NumberCurrent - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusJESD-609 CodeTerminal FinishReach Compliance CodeECCN CodeFactory Lead TimeSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeDS Breakdown Voltage-MinFET TechnologyView Compare
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MRF6S21190HSR5NI-880STape & Reel (TR)2008Obsolete3 (168 Hours)68V2.11GHz~2.17GHzMRF6S211901.6ALDMOS16dB54W28VROHS3 Compliant---------------------------
-
TO-272-4Tape & Reel (TR)2006Obsolete3 (168 Hours)68V880MHzMRF6S9125950mALDMOS20.2dB27W28VNon-RoHS Compliante0Tin/Lead (Sn/Pb)not_compliant-----------------------
-
NI-780STape & Reel (TR)2011Discontinued3 (168 Hours)120V1.3GHzMRF6V13250100mALDMOS22.7dB250W50VROHS3 Compliant---EAR99----------------------
-
TO-272BBTape & Reel (TR)2006Not For New Designs3 (168 Hours)110V860MHzMRF6V3090350mALDMOS22dB18W50VROHS3 Compliante3Matte Tin (Sn)-EAR9910 WeeksYESSILICON4ESD PROTECTION8541.29.00.75FET General Purpose PowerDUALFLAT26040R-PDFM-F4Not Qualified225°C1SINGLEENHANCEMENT MODESOURCEAMPLIFIERN-CHANNEL115VMETAL-OXIDE SEMICONDUCTOR
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