NXP USA Inc. MRF6S21140HR3
- Part Number:
- MRF6S21140HR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3069860-MRF6S21140HR3
- Description:
- FET RF 68V 2.12GHZ NI-880
- ECAD Model:
-
- Datasheet:
- MRF6S21140HR3
NXP USA Inc. MRF6S21140HR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6S21140HR3.
- Package / CaseNI-880
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations3
- ECCN CodeEAR99
- Voltage - Rated68V
- HTS Code8541.29.00.75
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Frequency2.12GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF6S21140
- JESD-30 CodeR-CDFM-F3
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test1.2A
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain15.5dB
- DS Breakdown Voltage-Min68V
- Power - Output30W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF6S21140HR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6S21140HR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6S21140HR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6S21140HR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6S21140HR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6S21140HR3 More Descriptions
2 x W-CDMA, Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 30 W Avg., 28 V
Trans RF MOSFET N-CH 68V 3-Pin NI-880 T/R
RF MOSFET Transistors HV6 LDMOS 30W NI880H
MOSFET RF N-CHAN 28V 30W NI-880
Trans RF MOSFET N-CH 68V 3-Pin NI-880 T/R
RF MOSFET Transistors HV6 LDMOS 30W NI880H
MOSFET RF N-CHAN 28V 30W NI-880
The three parts on the right have similar specifications to MRF6S21140HR3.
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ImagePart NumberManufacturerPackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusFactory Lead TimeSubcategoryPower Dissipation-Max (Abs)JESD-609 CodeTerminal FinishAdditional FeatureView Compare
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MRF6S21140HR3NI-880YESSILICONTape & Reel (TR)2008Obsolete3 (168 Hours)3EAR9968V8541.29.00.75DUALFLAT260unknown2.12GHz40MRF6S21140R-CDFM-F3Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE1.2AAMPLIFIERN-CHANNELLDMOS15.5dB68V30WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant------- -
NI-780SYESSILICONTape & Reel (TR)2011ActiveNot Applicable2EAR99120V8541.29.00.75DUALFLAT260-1.3GHz40MRF6V13250R-CDFP-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS22.7dB120V250WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant10 WeeksFET General Purpose Power476W---
-
NI-880YESSILICONTape & Reel (TR)2012Obsolete3 (168 Hours)2EAR9968V8541.29.00.75DUALFLAT260-2.39GHz40MRF6S24140R-CDFM-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE1.3A-N-CHANNELLDMOS15.2dB68V28WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant------
-
TO-272BBYESSILICONTape & Reel (TR)2006Not For New Designs3 (168 Hours)4EAR99110V8541.29.00.75DUALFLAT260-860MHz40MRF6V3090R-PDFM-F4Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE350mAAMPLIFIERN-CHANNELLDMOS22dB115V18WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant10 WeeksFET General Purpose Power-e3Matte Tin (Sn)ESD PROTECTION
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