NXP USA Inc. MRF6S19100GNR1

Name: MRF6S19100GNR1
Brand: NXP USA Inc.
SKU: 2477362-MRF6S19100GNR1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF6S19100GNR1

Manufacturer:: NXP USA Inc.

Ventron No:: 2477362-MRF6S19100GNR1

Description:: FET RF 68V 1.99GHZ TO-270-2 GW

ECAD Model:

Datasheet:: MRF6S19100GNR1

Specifications

NXP USA Inc. MRF6S19100GNR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6S19100GNR1.

Package / Case
TO-270BA
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated
68V
Frequency
1.99GHz
Base Part Number
MRF6S19100
Current - Test
950mA
Transistor Type
LDMOS
Gain
14.5dB
Power - Output
22W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

MRF6S19100GNR1 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6S19100GNR1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6S19100GNR1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MRF6S19100GNR1 More Descriptions

MOSFET RF N-CH 28V TO-270-4 GW
1990MHZ 22W TO270WB4GN
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to MRF6S19100GNR1.

Image

Part Number

Manufacturer

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated

Frequency

Base Part Number

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

ECCN Code

Surface Mount

Transistor Element Material

Number of Terminations

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

Factory Lead Time

JESD-609 Code

Terminal Finish

Additional Feature

Subcategory

Transistor Application

View Compare
MRF6S19100GNR1

NXP USA Inc.

TO-270BA

Tape & Reel (TR)

2011

Obsolete

1 (Unlimited)

68V

1.99GHz

MRF6S19100

950mA

LDMOS

14.5dB

22W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MRF6V13250HR3

NXP USA Inc.

SOT-957A

Tape & Reel (TR)

2011

Discontinued

3 (168 Hours)

120V

1.3GHz

MRF6V13250

100mA

LDMOS

22.7dB

250W

50V

ROHS3 Compliant

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MRF6S19100GNR1 vs MRF6V13250HR3
MRF6S24140HR3

NXP USA Inc.

NI-880

Tape & Reel (TR)

2012

Obsolete

3 (168 Hours)

68V

2.39GHz

MRF6S24140

1.3A

LDMOS

15.2dB

28W

28V

ROHS3 Compliant

EAR99

YES

SILICON

2

8541.29.00.75

DUAL

FLAT

260

40

R-CDFM-F2

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

N-CHANNEL

68V

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

MRF6S19100GNR1 vs MRF6S24140HR3
MRF6V3090NBR1

NXP USA Inc.

TO-272BB

Tape & Reel (TR)

2006

Not For New Designs

3 (168 Hours)

110V

860MHz

MRF6V3090

350mA

LDMOS

22dB

18W

50V

ROHS3 Compliant

EAR99

YES

SILICON

4

8541.29.00.75

DUAL

FLAT

260

40

R-PDFM-F4

Not Qualified

225°C

1

SINGLE

ENHANCEMENT MODE

SOURCE

N-CHANNEL

115V

METAL-OXIDE SEMICONDUCTOR

10 Weeks

e3

Matte Tin (Sn)

ESD PROTECTION

FET General Purpose Power

AMPLIFIER

MRF6S19100GNR1 vs MRF6V3090NBR1