ON Semiconductor MPS2222ARLG
- Part Number:
- MPS2222ARLG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585539-MPS2222ARLG
- Description:
- TRANS NPN 40V 0.6A TO-92
- Datasheet:
- MPS2222ARLG
ON Semiconductor MPS2222ARLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPS2222ARLG.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
MPS2222ARLG Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 40V.
MPS2222ARLG Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3
MPS2222ARLG Applications
There are a lot of Rochester Electronics, LLC
MPS2222ARLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 40V.
MPS2222ARLG Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3
MPS2222ARLG Applications
There are a lot of Rochester Electronics, LLC
MPS2222ARLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPS2222ARLG More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 300MHz
Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, NPN, 40V, TO-92; Tra; BIPOLAR TRANSISTOR, NPN, 40V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:100; No. of Pins:3
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 300MHz
Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, NPN, 40V, TO-92; Tra; BIPOLAR TRANSISTOR, NPN, 40V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:100; No. of Pins:3
The three parts on the right have similar specifications to MPS2222ARLG.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusMountPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)Lead FreeSurface MountTransistor Element MaterialPbfree CodeHTS CodeTerminal FormConfigurationJEDEC-95 CodeCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxView Compare
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MPS2222ARLGThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)625mWNPN100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V600mA300MHzROHS3 Compliant------------------------------------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Reel (TR)Obsolete1 (Unlimited)-PNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-600mA-Non-RoHS CompliantThrough Hole2009e03EAR99Tin/Lead (Sn/Pb)150°C-55°CEUROPEAN PART NUMBEROther Transistors-60V625mWBOTTOM240not_compliant-600mA30MPS2907A3O-PBCY-T3Not Qualified1SingleSWITCHING200MHzPNP1.6V600mA60V200MHz-1.6V-60V5V75100ns45nsContains Lead----------
-
----Tape & Reel (TR)Obsolete1 (Unlimited)--------Non-RoHS Compliant--e03EAR99TIN LEAD------BOTTOM240--30-3O-PBCY-T3Not Qualified1-SWITCHING-PNP---200MHz----100ns45ns-NOSILICONno8541.21.00.75THROUGH-HOLESINGLETO-920.6A5060V
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)625mWPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V600mA200MHzNon-RoHS Compliant--e03-TIN LEAD------BOTTOM240unknown-30-3O-PBCY-T3COMMERCIAL1-SWITCHING-PNP---200MHz----100ns45ns-NOSILICONno--SINGLE----
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