ON Semiconductor MPS2222RLRM
- Part Number:
- MPS2222RLRM
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585625-MPS2222RLRM
- Description:
- TRANS NPN 30V 0.6A TO-92
- Datasheet:
- MPS2222, 2222A
ON Semiconductor MPS2222RLRM technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPS2222RLRM.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency250MHz
- Frequency - Transition250MHz
- RoHS StatusNon-RoHS Compliant
MPS2222RLRM Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPS2222RLRM Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz
MPS2222RLRM Applications
There are a lot of Rochester Electronics, LLC
MPS2222RLRM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPS2222RLRM Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz
MPS2222RLRM Applications
There are a lot of Rochester Electronics, LLC
MPS2222RLRM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPS2222RLRM More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 250MHz
SMALL SIGNAL BIPOLAR TRANSISTOR
MPS2222RLRM, SINGLE BIPOLAR TRANSISTORS;
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 250MHz
SMALL SIGNAL BIPOLAR TRANSISTOR
MPS2222RLRM, SINGLE BIPOLAR TRANSISTORS;
The three parts on the right have similar specifications to MPS2222RLRM.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountPublishedECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)Lead FreeHTS CodeTerminal FormJEDEC-95 CodeCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxLifecycle StatusNumber of PinsFrequencyPower DissipationRadiation HardeningView Compare
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MPS2222RLRMThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e0noObsolete1 (Unlimited)3TIN LEADBOTTOM240unknown303O-PBCY-T3COMMERCIAL1SINGLE625mWSWITCHINGNPNNPN100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA30V600mA250MHz250MHzNon-RoHS Compliant-----------------------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---Tape & Reel (TR)e0-Obsolete1 (Unlimited)3Tin/Lead (Sn/Pb)BOTTOM240not_compliant303O-PBCY-T3Not Qualified1--SWITCHINGPNPPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-600mA200MHz-Non-RoHS CompliantThrough Hole2009EAR99150°C-55°CEUROPEAN PART NUMBEROther Transistors-60V625mW-600mAMPS2907ASingle200MHz1.6V600mA60V-1.6V-60V5V75100ns45nsContains Lead-----------
-
--NOSILICON-Tape & Reel (TR)e0noObsolete1 (Unlimited)3TIN LEADBOTTOM240-303O-PBCY-T3Not Qualified1SINGLE-SWITCHINGPNP------200MHz-Non-RoHS Compliant--EAR99-----------------100ns45ns-8541.21.00.75THROUGH-HOLETO-920.6A5060V-----
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)BOTTOM260-403--1--AMPLIFIERPNPPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA--200MHz-RoHS Compliant-2007EAR99---Other Transistors-60V625mW-600mAMPS2907ASingle200MHz60V600mA60V-1.6V60V5V75-45nsLead Free------LAST SHIPMENTS (Last Updated: 1 day ago)3200MHz625mWNo
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