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MJE5851G

ON Semiconductor MJE5851G

Part Number:
MJE5851G
Manufacturer:
ON Semiconductor
Ventron No:
2464795-MJE5851G
Description:
TRANS PNP 350V 8A TO220AB
ECAD Model:
Datasheet:
MJE5851G

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Specifications
ON Semiconductor MJE5851G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE5851G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -350V
  • Max Power Dissipation
    80W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -8A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    80W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    350V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5A 5V
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 3A, 8A
  • Collector Emitter Breakdown Voltage
    350V
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    400V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    15
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE5851G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 5 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 8A volts.

MJE5851G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A


MJE5851G Applications
There are a lot of ON Semiconductor
MJE5851G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE5851G More Descriptions
350V 80W 8A 5@5A5V PNP 5V@8A3A -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 350V 8A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
8.0 A, 350 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR TRANSISTOR, PNP, -350V, TO-220;
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Product Comparison
The three parts on the right have similar specifications to MJE5851G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    Reach Compliance Code
    Frequency
    Qualification Status
    Gain Bandwidth Product
    Current - Collector Cutoff (Max)
    Transition Frequency
    HTS Code
    Polarity
    Continuous Collector Current
    Mount
    Base Part Number
    Max Breakdown Voltage
    REACH SVHC
    View Compare
  • MJE5851G
    MJE5851G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    Through Hole
    TO-220-3
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    SWITCHMODE™
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -350V
    80W
    260
    -8A
    40
    3
    1
    Single
    80W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    350V
    8A
    5 @ 5A 5V
    TO-220AB
    5V @ 3A, 8A
    350V
    2V
    400V
    6V
    15
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE5731A
    MJE5731A
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    Through Hole
    TO-220-3
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    -
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    -375V
    40W
    240
    -1A
    30
    3
    1
    Single
    40W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    375V
    1A
    30 @ 300mA 10V
    TO-220AB
    1V @ 200mA, 1A
    375V
    1V
    350V
    5V
    30
    -
    Non-RoHS Compliant
    Contains Lead
    LEADFORM OPTIONS ARE AVAILABLE
    not_compliant
    10MHz
    Not Qualified
    10MHz
    1mA
    10MHz
    -
    -
    -
    -
    -
    -
    -
    MJE5851G vs MJE5731A
  • MJE5742
    MJE5742
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 weeks ago)
    -
    Through Hole
    TO-220-3
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    -
    2008
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    400V
    2W
    240
    8A
    30
    3
    1
    Single
    2W
    COLLECTOR
    SWITCHING
    -
    NPN - Darlington
    3V
    8A
    200 @ 2A 5V
    TO-220AB
    3V @ 400mA, 8A
    400V
    -
    -
    8V
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    not_compliant
    -
    Not Qualified
    -
    -
    -
    8541.29.00.95
    NPN
    8A
    -
    -
    -
    -
    MJE5851G vs MJE5742
  • MJE521
    MJE521
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    Through Hole
    TO-225AA, TO-126-3
    -
    3
    SILICON
    -65°C~150°C TJ
    Bulk
    -
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    40V
    40W
    NOT SPECIFIED
    4A
    NOT SPECIFIED
    3
    1
    Single
    40W
    -
    SWITCHING
    NPN
    NPN
    1V
    4A
    40 @ 1A 1V
    -
    -
    40V
    -
    40V
    4V
    40
    -
    Non-RoHS Compliant
    Lead Free
    -
    not_compliant
    -
    Not Qualified
    -
    100μA ICBO
    10MHz
    -
    -
    -
    Through Hole
    MJE521
    400V
    No SVHC
    MJE5851G vs MJE521
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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