ON Semiconductor MJE350G

Name: MJE350G
Brand: ON Semiconductor
SKU: 2463222-MJE350G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE350G

Manufacturer:: ON Semiconductor

Ventron No:: 2463222-MJE350G

Description:: TRANS PNP 300V 0.5A TO225AA

ECAD Model:

Datasheet:: MJE350G

Specifications

ON Semiconductor MJE350G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE350G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
20W
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJE350
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Collector Emitter Breakdown Voltage
300V
Collector Base Voltage (VCBO)
3V
Emitter Base Voltage (VEBO)
3V
hFE Min
30
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE350G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Collector current can be as low as 500mA volts at its maximum.

MJE350G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA

MJE350G Applications
There are a lot of ON Semiconductor
MJE350G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE350G More Descriptions

0.5 A, 300 V PNP Bipolar Power Transistor
Trans GP BJT PNP 300V 0.5A 20000mW 3-Pin(3 Tab) TO-225 Box
MJE Series 300 V 500 mA Plastic Medium Power PNP Silicon Transistor - TO-225
ON Semi MJE350G PNP High Voltage Bipolar Transistor, 0.5 A, 300 V, 3-Pin TO-225 | ON Semiconductor MJE350G
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 500mA; DC Current Gain hFE: 240hFE; Transistor Case Styl
...designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability.
Bipolar Transistor, Pnp, -300V, To-225; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:20W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:- Rohs Compliant: Yes |Onsemi MJE350G

Product Comparison

The three parts on the right have similar specifications to MJE350G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Frequency

Case Connection

Gain Bandwidth Product

Vce Saturation (Max) @ Ib, Ic

Transition Frequency

Collector Emitter Saturation Voltage

Terminal Position

Configuration

View Compare
MJE350G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

6 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-300V

20W

260

-500mA

40

MJE350

3

1

Single

20W

SWITCHING

PNP

PNP

300V

500mA

30 @ 50mA 10V

100μA ICBO

300V

3V

3V

30

11.0998mm

7.7978mm

2.9972mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
MJE3055TG

ON Semiconductor

ACTIVE (Last Updated: 2 hours ago)

8 Weeks

-

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

60V

75W

260

10A

40

MJE3055

3

1

Single

75W

SWITCHING

NPN

NPN

60V

10A

20 @ 4A 4V

700μA

60V

70V

5V

20

15.748mm

10.2616mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

2MHz

COLLECTOR

2MHz

8V @ 3.3A, 10A

2MHz

1.1V

-

-

MJE350G vs MJE3055TG
MJE371G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

-

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-40V

40W

260

-4A

40

-

3

1

Single

40W

SWITCHING

PNP

PNP

40V

4A

40 @ 1A 1V

100μA ICBO

40V

40V

4V

40

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

-

-

-

-

-

-

-

-

MJE350G vs MJE371G
MJE3439G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

2 Weeks

-

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

350V

15W

260

300mA

40

-

3

1

-

15W

-

NPN

NPN

350V

300mA

15 @ 20mA 10V

20μA

350V

450V

5V

30

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

15MHz

-

15MHz

500mV @ 4mA, 50mA

15MHz

500mV

SINGLE

SINGLE

MJE350G vs MJE3439G

Certification

Related parts for MJE350G

MJE371

ON Semiconductor

TRANS PNP 40V 4A TO225AA
MJE3055T

ON Semiconductor

TRANS NPN 60V 10A TO220AB
MJE3055TG

ON Semiconductor

TRANS NPN 60V 10A TO220AB
MJE350

STMicroelectronics

TRANS PNP 300V 0.5A SOT-32
MJE3055TTU

Fairchild/ON Semiconductor

TRANS NPN 60V 10A TO-220
MJE3055T

STMicroelectronics

TRANS NPN 60V 10A TO-220
MJE340

STMicroelectronics

TRANS NPN 300V 0.5A SOT-32
MJE371G

ON Semiconductor

TRANS PNP 40V 4A TO225AA
MJE3439G

ON Semiconductor

TRANS NPN 350V 0.3A TO225AA
MJE340G

ON Semiconductor

TRANS NPN 300V 0.5A TO225AA

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MJE350G Specification

Part Number	Manufacturers	Description	Stock	Price
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	1966	1 $0.4983 10 $0.4237 100 $0.2896 500 $0.2848 1000 $0.2331
MJE350G DISTI #	ON Semiconductor	TRANS PNP 300V 0.5A TO225AA RoHS: Compliant	1430	1 $0.6 10 $0.532 100 $0.408 500 $0.32256 1000 $0.25805
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	1966	37 $0.4237 100 $0.2896 500 $0.2877 1000 $0.2361
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	1197	57 $0.2461 100 $0.2374 250 $0.2294 500 $0.2219 1000 $0.2148
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin TO-225 Bulk - Bul RoHS: Compliant	4434	3000 $0.1739 4000 $0.1729 7000 $0.1709 15000 $0.1689 30000 $0.1639
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin TO-225 Bulk (Alt: RoHS: Compliant	0	3000 $0.22632 6000 $0.21762 9000 $0.20956 15000 $0.20207 30000 $0.1951 75000 $0.1886 150000 $0.18551
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin TO-225 Bulk - Bul RoHS: Compliant	0	1 $0.53 10 $0.435 100 $0.265 500 $0.235 1000 $0.205 2500 $0.175 10000 $0.163
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin TO-225 Bulk - Bul RoHS: Compliant	0	1 $0.596 10 $0.493 100 $0.324 500 $0.293 1000 $0.262 2500 $0.224 10000 $0.216
MJE350G DISTI #	ON Semiconductor	BIPOLAR TRANSISTOR, PNP, -300V, TO-225, Transisto	1704	1 $0.507 10 $0.419 100 $0.276 500 $0.249 1000 $0.223 2500 $0.191 10000 $0.184
MJE350G DISTI #	ON Semiconductor	TRANS PNP 300V 0.5A TO225AA RoHS: Compliant	0	20 $0.53 40 $0.519 100 $0.504 200 $0.482 500 $0.451
MJE350G DISTI #	ON Semiconductor	MJE Series 300 V 500 mA Plastic Medium Power PNP S RoHS: Compliant	280	25 $0.445 300 $0.395 1250 $0.345
MJE350G DISTI #	ON Semiconductor	RoHS: Not Compliant	36981	1 $0.29 25 $0.27 100 $0.26 500 $0.25 1000 $0.24
MJE350G DISTI #	ON Semiconductor	Bipolar Transistors - BJT 0.5A 300V 20W PNP RoHS: Compliant	2668	1 $0.58 10 $0.477 100 $0.308 1000 $0.246 2500 $0.208 10000 $0.2 25000 $0.192
MJE350 DISTI #	STMicroelectronics	Bipolar Transistors - BJT PNP Medium Power RoHS: Compliant	830	1 $0.64 10 $0.525 100 $0.32 1000 $0.247 2000 $0.211
MJE350 DISTI #	ON Semiconductor	Bipolar Transistors - BJT 0.5A 300V 20W PNP RoHS: Not Compliant	0
MJE350G DISTI #	ON Semiconductor	POWER 0.5A 300V PNP SILICON MJE350G, RL	2333	100 $0.274
MJE350G DISTI #	ON Semiconductor	POWER 0.5A 300V PNP SILICON MJE350G, PK	540	20 $0.423 100 $0.274
MJE350G DISTI #	ON Semiconductor	INSTOCK	19887
MJE350G DISTI #	ON Semiconductor	TRANSISTOR, PNP, TO-126 RoHS: Compliant	1245	5 $0.416 25 $0.39 100 $0.238 250 $0.212 500 $0.187
MJE350G DISTI #		PowerBipolarTransistor,0.5AI(C),300VV(BR)CEO,1-Ele RoHS: Compliant	5316	1000 $0.382 5316 $0.3473
MJE350G DISTI #	ON Semiconductor	TRANSISTOR, PNP, TO-126 RoHS: Compliant	1140	1 $0.918 10 $0.755 100 $0.488 1000 $0.39 2500 $0.329 10000 $0.317 25000 $0.304 50000 $0.3
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	1232	5 $1.22 25 $0.491 50 $0.447 100 $0.398 500 $0.327 1000 $0.301
MJE350G DISTI #	ON Semiconductor	Trans GP BJT PNP 300V 0.5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	1966	10 $0.4237 100 $0.2896 500 $0.2869 1000 $0.2357

ON Semiconductor MJE350G

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