MJE200STU

Fairchild/ON Semiconductor MJE200STU

Part Number:
MJE200STU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2465520-MJE200STU
Description:
TRANS NPN 25V 5A TO-126
ECAD Model:
Datasheet:
MJE200STU

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Specifications
Fairchild/ON Semiconductor MJE200STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJE200STU.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 6 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Weight
    761mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    25V
  • Max Power Dissipation
    15W
  • Current Rating
    5A
  • Frequency
    65MHz
  • Base Part Number
    MJE200
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    15W
  • Gain Bandwidth Product
    65MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    25V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    45 @ 2A 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.8V @ 1A, 5A
  • Collector Emitter Breakdown Voltage
    25V
  • Transition Frequency
    65MHz
  • Collector Emitter Saturation Voltage
    1.8V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    8V
  • hFE Min
    45
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE200STU Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.

MJE200STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz


MJE200STU Applications
There are a lot of ON Semiconductor
MJE200STU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE200STU More Descriptions
Transistor General Purpose BJT NPN 25 Volt 5A 3-Pin(3 Tab) TO-126
5.0 A, 25 V NPN Bipolar Power Transistor
MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
Product Comparison
The three parts on the right have similar specifications to MJE200STU.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Transistor Application
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Supplier Device Package
    View Compare
  • MJE200STU
    MJE200STU
    LAST SHIPMENTS (Last Updated: 6 days ago)
    6 Weeks
    Tin
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    761mg
    SILICON
    150°C TJ
    Tube
    2001
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    25V
    15W
    5A
    65MHz
    MJE200
    1
    Single
    15W
    65MHz
    NPN
    NPN
    25V
    5A
    45 @ 2A 1V
    100nA ICBO
    1.8V @ 1A, 5A
    25V
    65MHz
    1.8V
    40V
    8V
    45
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE2955T
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    8V @ 3.3A, 10A
    PNP
    TO-220AB
    -
    75W
    Tube
    TO-220-3
    -55°C ~ 150°C (TJ)
    Through Hole
    2MHz
    20 @ 4A, 4V
    700µA
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE210TG
    -
    -
    -
    -
    Through Hole
    TO-225AA, TO-126-3
    -
    -
    SILICON
    -65°C~150°C TJ
    Bulk
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    PNP
    PNP
    -
    -
    45 @ 2A 1V
    100nA ICBO
    1.8V @ 1A, 5A
    -
    65MHz
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    MATTE TIN
    SINGLE
    260
    unknown
    40
    3
    R-PSFM-T3
    COMMERCIAL
    SINGLE
    15W
    AMPLIFIER
    40V
    5A
    65MHz
    -
  • MJE200TSTU
    -
    -
    -
    -
    Through Hole
    TO-225AA, TO-126-3
    -
    -
    -
    150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MJE200
    -
    -
    -
    -
    -
    NPN
    -
    -
    45 @ 2A 1V
    100nA ICBO
    1.8V @ 1A, 5A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    15W
    -
    25V
    5A
    65MHz
    TO-126-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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