Fairchild/ON Semiconductor MJE200STU
- Part Number:
- MJE200STU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465520-MJE200STU
- Description:
- TRANS NPN 25V 5A TO-126
- Datasheet:
- MJE200STU
Fairchild/ON Semiconductor MJE200STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJE200STU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation15W
- Current Rating5A
- Frequency65MHz
- Base Part NumberMJE200
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation15W
- Gain Bandwidth Product65MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency65MHz
- Collector Emitter Saturation Voltage1.8V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)8V
- hFE Min45
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE200STU Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.
MJE200STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJE200STU Applications
There are a lot of ON Semiconductor
MJE200STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.
MJE200STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJE200STU Applications
There are a lot of ON Semiconductor
MJE200STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE200STU More Descriptions
Transistor General Purpose BJT NPN 25 Volt 5A 3-Pin(3 Tab) TO-126
5.0 A, 25 V NPN Bipolar Power Transistor
MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
5.0 A, 25 V NPN Bipolar Power Transistor
MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
The three parts on the right have similar specifications to MJE200STU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Surface MountTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPower - MaxTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageView Compare
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MJE200STULAST SHIPMENTS (Last Updated: 6 days ago)6 WeeksTinThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJTube2001e3yesObsolete1 (Unlimited)3EAR99Other Transistors25V15W5A65MHzMJE2001Single15W65MHzNPNNPN25V5A45 @ 2A 1V100nA ICBO1.8V @ 1A, 5A25V65MHz1.8V40V8V45NoROHS3 CompliantLead Free-------------------------------
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--------------------------------------------60V8V @ 3.3A, 10APNPTO-220AB-75WTubeTO-220-3-55°C ~ 150°C (TJ)Through Hole2MHz20 @ 4A, 4V700µA10A----------------
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----Through HoleTO-225AA, TO-126-3--SILICON-65°C~150°C TJBulk-e3yesObsolete1 (Unlimited)3-------1---PNPPNP--45 @ 2A 1V100nA ICBO1.8V @ 1A, 5A-65MHz-----ROHS3 Compliant---------------NOMATTE TINSINGLE260unknown403R-PSFM-T3COMMERCIALSINGLE15WAMPLIFIER40V5A65MHz-
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----Through HoleTO-225AA, TO-126-3---150°C TJTube---Obsolete1 (Unlimited)-------MJE200-----NPN--45 @ 2A 1V100nA ICBO1.8V @ 1A, 5A---------------------------------15W-25V5A65MHzTO-126-3
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