ON Semiconductor MJE200G

Name: MJE200G
Brand: ON Semiconductor
SKU: 3585201-MJE200G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE200G

Manufacturer:: ON Semiconductor

Ventron No:: 3585201-MJE200G

Description:: TRANS NPN 40V 5A TO225AA

ECAD Model:

Datasheet:: MJE200G

Specifications

ON Semiconductor MJE200G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE200G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
13 Weeks
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
15W
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
65MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJE200
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
15W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
65MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
1.8V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
8V
hFE Min
70
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE200G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.As it features a collector emitter saturation voltage of 1.8V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 65MHz in the part.When collector current reaches its maximum, it can reach 5A volts.

MJE200G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz

MJE200G Applications
There are a lot of ON Semiconductor
MJE200G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE200G More Descriptions

5.0 A, 25 V NPN Bipolar Power Transistor
Trans GP BJT NPN 25V 5A 15000mW 3-Pin(3 Tab) TO-225 Box
MJE Series 40 V 5 A NPN Complementary Silicon Plastic Power Transistor - TO-225
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin
RF Transistor, NPN 25V 65MHZ TO-225; Tra; RF Transistor, NPN 25V 65MHZ TO-225; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.5W; DC Collector Current:5A; DC Current Gain hFE:65; No. of Pins:3Pins; MSL:

Product Comparison

The three parts on the right have similar specifications to MJE200G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Reach Compliance Code

Qualification Status

Polarity

Current - Collector (Ic) (Max)

Terminal Position

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Frequency - Transition

Supplier Device Package

View Compare
MJE200G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

25V

15W

260

5A

65MHz

40

MJE200

3

1

Single

15W

AMPLIFIER

65MHz

NPN

NPN

25V

5A

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

40V

65MHz

1.8V

40V

8V

70

11.0998mm

7.7978mm

2.9972mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE271

ON Semiconductor

-

-

Through Hole

TO-225AA, TO-126-3

NO

3

-

SILICON

-65°C~150°C TJ

Bulk

2008

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-100V

1.5W

240

-2A

-

30

-

3

1

Single

-

-

6MHz

-

PNP - Darlington

3V

2A

1500 @ 120mA 10V

1mA

3V @ 1.2mA, 120mA

100V

6MHz

2V

100V

5V

500

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

8541.29.00.95

not_compliant

Not Qualified

PNP

2A

-

-

-

-

-

-

-

MJE200G vs MJE271
MJE210TG

ON Semiconductor

-

-

Through Hole

TO-225AA, TO-126-3

NO

-

-

SILICON

-65°C~150°C TJ

Bulk

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

-

-

260

-

-

40

-

3

1

-

-

AMPLIFIER

-

PNP

PNP

-

-

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

-

65MHz

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

unknown

COMMERCIAL

-

5A

SINGLE

R-PSFM-T3

SINGLE

15W

40V

65MHz

-

MJE200G vs MJE210TG
MJE200TSTU

Fairchild/ON Semiconductor

-

-

Through Hole

TO-225AA, TO-126-3

-

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

MJE200

-

-

-

-

-

-

-

NPN

-

-

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5A

-

-

-

15W

25V

65MHz

TO-126-3

MJE200G vs MJE200TSTU

Certification

Related parts for MJE200G

MJE200G

ON Semiconductor

TRANS NPN 40V 5A TO225AA
MJE2955T

ON Semiconductor

TRANS PNP 60V 10A TO220AB
MJE210STU

Fairchild/ON Semiconductor

TRANS PNP 25V 5A TO-126
MJE210

ON Semiconductor

TRANS PNP 40V 5A TO225AA
MJE2955TG

ON Semiconductor

TRANS PNP 60V 10A TO220AB
MJE210G

ON Semiconductor

TRANS PNP 40V 5A TO225AA
MJE210T

ON Semiconductor

TRANS PNP 40V 5A TO-225
MJE271

ON Semiconductor

TRANS PNP DARL 100V 2A TO-225
MJE210TG

ON Semiconductor

TRANS PNP 40V 5A TO225
MJE200TSTU

Fairchild/ON Semiconductor

TRANS NPN 25V 5A TO-126

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MJE200G Specification

Part Number	Manufacturers	Description	Stock	Price
MJE200G DISTI #V36:1790_07305586	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	739	1 $0.561 10 $0.4626 100 $0.2591 1000 $0.1383 2500 $0.1285
MJE200G DISTI #MJE200GOS-ND	ON Semiconductor	TRANS NPN 40V 5A TO225AA RoHS: Compliant	413	1 $0.54 10 $0.465 100 $0.3475 500 $0.27304 1000 $0.21099
MJE200G DISTI #25632836	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	6000	3000 $0.1327 5000 $0.1305
MJE200G DISTI #31588779	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	739	48 $0.4521 100 $0.2785 1000 $0.1487 2500 $0.1381
MJE200G DISTI #32878688	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	660	353 $0.1775
MJE200G DISTI #30591400	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Box RoHS: Compliant	400	50 $0.3175 100 $0.2882
MJE200G DISTI #MJE200G	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Bulk ( RoHS: Compliant	1500	5 $0.369 25 $0.297 100 $0.225 250 $0.206 500 $0.188 1000 $0.169 5000 $0.15
MJE200G DISTI #MJE200G	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Bulk - RoHS: Compliant	17900	500 $0.13438 1000 $0.13351 1500 $0.13179 2500 $0.13013 5000 $0.12691
MJE200G DISTI #MJE200G	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Bulk - RoHS: Compliant	0	1389 $0.2349 2778 $0.2329 4167 $0.2299 6945 $0.2269 13890 $0.2219
MJE200G DISTI #45J1500	ON Semiconductor	Trans GP BJT NPN 25V 5A 3-Pin(3 Tab) TO-225 Bulk - RoHS: Compliant	0	1 $0.532 10 $0.439 100 $0.273 500 $0.243 1000 $0.213 2500 $0.184 10000 $0.172
MJE200G DISTI #45J1500	ON Semiconductor	RF TRANSISTOR, NPN 25V 65MHZ TO-225, Transistor P	660	1 $0.142 10 $0.142 100 $0.142 500 $0.142 1000 $0.142 2500 $0.142 10000 $0.142
MJE200G. DISTI #27AC8975	ON Semiconductor	BIP C77 NPN 5A 25V ROHS COMPLIANT: YES	0	1 $0.543 10 $0.448 100 $0.279 500 $0.243 1000 $0.213 2500 $0.184 10000 $0.172
MJE200G DISTI #70100010	ON Semiconductor	TRANS NPN 40V 5A TO225AA RoHS: Compliant	0	1 $0.57 100 $0.542 250 $0.514
MJE200G DISTI #863-MJE200G	ON Semiconductor	Bipolar Transistors - BJT 5A 25V 15W NPN RoHS: Compliant	1234	1 $0.52 10 $0.427 100 $0.261 1000 $0.201 2500 $0.172
MJE200G DISTI #	ON Semiconductor	MJE Series 40 V 5 A NPN Complementary Silicon Plas RoHS: Compliant	2200	100 $0.225 500 $0.148 1000 $0.141 2000 $0.135 4000 $0.129
MJE200G DISTI #	ON Semiconductor	Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1 RoHS: Compliant	208310	1 $0.29 25 $0.27 100 $0.26 500 $0.25 1000 $0.24
MJE200G DISTI #	ON Semiconductor		566
MJE200G DISTI #2535634	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 40V, TO-225-3 RoHS: Compliant	1582	1 $0.8 10 $0.656 100 $0.401 1000 $0.31 2500 $0.265
MJE200G. DISTI #1126460	ON Semiconductor	RF TRANSISTOR, NPN 25V 65MHZ TO-225 RoHS: Compliant	660	1 $0.8 10 $0.656 100 $0.401 1000 $0.31 2500 $0.265
MJE200G DISTI #2535634	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 40V, TO-225-3	1903	5 $0.374 25 $0.351 100 $0.201 250 $0.184 500 $0.167
MJE200G DISTI #XSFP00000056491		Power Bipolar Transistor, 5A I(C), 40VV(BR)CEO,1-E RoHS: Compliant	1188	676 $0.296 1188 $0.2691

ON Semiconductor MJE200G

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