ON Semiconductor MJE2955T

Name: MJE2955T
Brand: ON Semiconductor
SKU: 3069169-MJE2955T
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE2955T

Manufacturer:: ON Semiconductor

Ventron No:: 3069169-MJE2955T

Description:: TRANS PNP 60V 10A TO220AB

ECAD Model:

Datasheet:: MJE2955T

Specifications

ON Semiconductor MJE2955T technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE2955T.

Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Transistor Type:
PNP
Supplier Device Package:
TO-220AB
Series:
-
Power - Max:
75W
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Current - Collector Cutoff (Max):
700µA
Current - Collector (Ic) (Max):
10A

Description

We can supply AMI Semiconductor / ON Semiconductor MJE2955T, use the request quote form to request MJE2955T pirce, AMI Semiconductor / ON Semiconductor Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MJE2955T.The price and lead time for MJE2955T depending on the quantity required, availability and warehouse location.

MJE2955T More Descriptions

Trans GP BJT PNP 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
Power Bipolar, PNP, 4V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style

Product Comparison

The three parts on the right have similar specifications to MJE2955T.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
MJE2955T

ON Semiconductor

60V

8V @ 3.3A, 10A

PNP

TO-220AB

-

75W

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

2MHz

20 @ 4A, 4V

700µA

10A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE210

ON Semiconductor

40V

1.8V @ 1A, 5A

PNP

TO-225AA

-

15W

Bulk

TO-225AA, TO-126-3

-65°C ~ 150°C (TJ)

Through Hole

65MHz

45 @ 2A, 1V

100nA (ICBO)

5A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJE2955T vs MJE210
MJE210G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 5 days ago)

7 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-25V

15W

260

-5A

65MHz

40

MJE210

3

1

Single

15W

AMPLIFIER

65MHz

PNP

PNP

25V

5A

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

40V

65MHz

1.8V

40V

8V

70

11.0998mm

7.7978mm

2.9972mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

MJE2955T vs MJE210G
MJE210TG

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-225AA, TO-126-3

NO

-

-

SILICON

-65°C~150°C TJ

Bulk

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

-

-

260

-

-

40

-

3

1

-

-

AMPLIFIER

-

PNP

PNP

-

-

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

-

65MHz

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SINGLE

unknown

R-PSFM-T3

COMMERCIAL

SINGLE

15W

40V

5A

65MHz

MJE2955T vs MJE210TG