ON Semiconductor MJE2955TG

Name: MJE2955TG
Brand: ON Semiconductor
SKU: 2845294-MJE2955TG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE2955TG

Manufacturer:: ON Semiconductor

Ventron No:: 2845294-MJE2955TG

Description:: TRANS PNP 60V 10A TO220AB

ECAD Model:

Datasheet:: MJE2955TG

Specifications

ON Semiconductor MJE2955TG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE2955TG.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
75W
Peak Reflow Temperature (Cel)
260
Current Rating
-10A
Frequency
2MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJE2955
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
9.28mm
Length
10.28mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE2955TG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

MJE2955TG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJE2955TG Applications
There are a lot of ON Semiconductor
MJE2955TG applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE2955TG More Descriptions

Bipolar Power Transistor, PNP, 10 A, 60 V, 75 Watt
Trans GP BJT PNP 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 60 V 10 A PNP Complementary Silicon Plastic Power Transistor TO-220AB
ON Semi MJE2955TG PNP Bipolar Transistor, 10 A, 60 V, 3-Pin TO-220AB | ON Semiconductor MJE2955TG
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, PNP -60V TO-220; TRA; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V;
TRANS, BIPOL, PNP, -60V, TO-220-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: -10A; DC Current Gain hFE: 20hFE; Transisto
Bipolar Transistor, Pnp -60V To-220; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi MJE2955TG.

Product Comparison

The three parts on the right have similar specifications to MJE2955TG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

Qualification Status

Current - Collector (Ic) (Max)

HTS Code

Polarity

View Compare
MJE2955TG

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

75W

260

-10A

2MHz

40

MJE2955

3

1

Single

75W

COLLECTOR

SWITCHING

2MHz

PNP

PNP

60V

10A

20 @ 4A 4V

700μA

8V @ 3.3A, 10A

60V

2MHz

1.1V

70V

5V

20

9.28mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
MJE210G

ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

7 Weeks

-

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-25V

15W

260

-5A

65MHz

40

MJE210

3

1

Single

15W

-

AMPLIFIER

65MHz

PNP

PNP

25V

5A

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

40V

65MHz

1.8V

40V

8V

70

11.0998mm

7.7978mm

2.9972mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

-

-

-

-

-

MJE2955TG vs MJE210G
MJE210T

ON Semiconductor

-

-

-

Through Hole

TO-225AA, TO-126-3

NO

3

-

SILICON

-65°C~150°C TJ

Bulk

2009

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-25V

15W

NOT SPECIFIED

-5A

-

NOT SPECIFIED

MJE210

3

1

Single

-

-

AMPLIFIER

65MHz

PNP

PNP

1.8V

5A

45 @ 2A 1V

100nA ICBO

1.8V @ 1A, 5A

40V

65MHz

1.8V

40V

8V

70

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

5A

-

-

MJE2955TG vs MJE210T
MJE271

ON Semiconductor

-

-

-

Through Hole

TO-225AA, TO-126-3

NO

3

-

SILICON

-65°C~150°C TJ

Bulk

2008

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-100V

1.5W

240

-2A

-

30

-

3

1

Single

-

-

-

6MHz

-

PNP - Darlington

3V

2A

1500 @ 120mA 10V

1mA

3V @ 1.2mA, 120mA

100V

6MHz

2V

100V

5V

500

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

2A

8541.29.00.95

PNP

MJE2955TG vs MJE271

Certification

Related parts for MJE2955TG

MJE200G

ON Semiconductor

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MJE2955T

ON Semiconductor

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MJE210STU

Fairchild/ON Semiconductor

TRANS PNP 25V 5A TO-126
MJE210

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TRANS PNP 40V 5A TO225AA
MJE2955TG

ON Semiconductor

TRANS PNP 60V 10A TO220AB
MJE210G

ON Semiconductor

TRANS PNP 40V 5A TO225AA
MJE210T

ON Semiconductor

TRANS PNP 40V 5A TO-225
MJE271

ON Semiconductor

TRANS PNP DARL 100V 2A TO-225
MJE210TG

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TRANS PNP 40V 5A TO225
MJE200TSTU

Fairchild/ON Semiconductor

TRANS NPN 25V 5A TO-126

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MJE2955TG Specification

Part Number	Manufacturers	Description	Stock	Price
MJE2955TG DISTI #	ON Semiconductor	TRANS PNP 60V 10A TO220AB RoHS: Compliant	738	1 $0.97 50 $0.8014 100 $0.654 500 $0.51702 1000 $0.41362
MJE2955TG DISTI #	ON Semiconductor	Trans GP BJT PNP 60V 10A 3-Pin(3 Tab) TO-220AB Tub RoHS: Compliant	700	700 $0.49
MJE2955TG DISTI #	ON Semiconductor	Trans GP BJT PNP 60V 10A 3-Pin(3 Tab) TO-220AB Rai RoHS: Compliant	950	50 $0.4849 100 $0.3969 200 $0.3639 300 $0.3359 500 $0.3119
MJE2955TG DISTI #	ON Semiconductor	Trans GP BJT PNP 60V 10A 3-Pin(3 Tab) TO-220AB Rai RoHS: Compliant	438	1 $0.3209 10 $0.3189 25 $0.3169 50 $0.3149 100 $0.3109 500 $0.3069 1000 $0.3029
MJE2955TG DISTI #	ON Semiconductor	Trans GP BJT PNP 60V 10A 3-Pin(3 Tab) TO-220AB Rai RoHS: Compliant	0	1300 $0.3864 2600 $0.37154 3900 $0.35778 6500 $0.345 13000 $0.3331 32500 $0.322 65000 $0.31672
MJE2955TG DISTI #	ON Semiconductor	Trans GP BJT PNP 60V 10A 3-Pin(3 Tab) TO-220AB Rai RoHS: Compliant	0	1 $0.945 10 $0.789 100 $0.518 500 $0.469 1000 $0.419 2500 $0.358 10000 $0.346
MJE2955TG DISTI #	ON Semiconductor	BIPOLAR TRANSISTOR, PNP -60V TO-220, Transistor P	0	1 $0.945 10 $0.789 100 $0.518 500 $0.469 1000 $0.419 2500 $0.358 10000 $0.346
MJE2955TG. DISTI #	ON Semiconductor	BIP T0220 PNP 10A 60V , ROHS COMPLIANT: YES	438	1 $0.964 10 $0.805 100 $0.528 500 $0.469 1000 $0.419 2500 $0.358 10000 $0.346
MJE2955TG DISTI #	ON Semiconductor	ON Semi MJE2955TG PNP Bipolar Transistor, 10 A, RoHS: Compliant	0	200 $1.159
MJE2955TG DISTI #	ON Semiconductor	RoHS: Not Compliant	3737	1 $0.49 25 $0.45 100 $0.44 500 $0.42 1000 $0.4
MJE2955TG DISTI #	ON Semiconductor	MJE Series 60 V 10 A PNP Complementary Silicon Pla RoHS: Compliant	550	50 $0.42 250 $0.34 500 $0.335 1000 $0.325 2000 $0.315
MJE2955TG DISTI #	ON Semiconductor	Bipolar Transistors - BJT 10A 60V 125W PNP RoHS: Compliant	99	1 $0.92 10 $0.764 100 $0.493 1000 $0.394 2500 $0.333 10000 $0.321 25000 $0.308
MJE2955T DISTI #	STMicroelectronics	Bipolar Transistors - BJT PNP Gen Pur Switch RoHS: Compliant	0	1 $0.84 10 $0.696 100 $0.449 1000 $0.36 2000 $0.303
MJE2955T DISTI #	ON Semiconductor	Bipolar Transistors - BJT 10A 60V 125W PNP RoHS: Not Compliant	0
MJE2955TG DISTI #	ON Semiconductor	PNP POWER TRANSISTOR MJE2955T 10A, EA	1307	1 $1 5 $0.98
MJE2955TG DISTI #	ON Semiconductor		342
MJE2955TG DISTI #	ON Semiconductor	INSTOCK	1810
MJE2955TG DISTI #	ON Semiconductor	TRANS, BIPOL, PNP, -60V, TO-220-3 RoHS: Compliant	565	5 $0.661 25 $0.593 100 $0.38 250 $0.339 500 $0.298
MJE2955TG DISTI #		Power Bipolar Transistor, 4A I(C),80VV(BR)CEO,1-El RoHS: Compliant	249	250 $0.84
MJE2955TG DISTI #	ON Semiconductor	Complementary Silicon Plastic Power Transistors	500	1 $0.59 100 $0.46 500 $0.42 1000 $0.39
MJE2955TG DISTI #	ON Semiconductor	TRANS, BIPOL, PNP, -60V, TO-220-3 RoHS: Compliant	565	1 $1.46 10 $1.21 100 $0.781 1000 $0.624 2500 $0.528 10000 $0.509 25000 $0.488
MJE2955TG. DISTI #	ON Semiconductor	BIPOLAR TRANSISTOR, PNP -60V TO-220 RoHS: Compliant	0	1 $1.46 10 $1.21 100 $0.781 1000 $0.624 2500 $0.528 10000 $0.509 25000 $0.488

MJE2955~~(8)~~
MJE295~~(8)~~
MJE29~~(8)~~
MJE2~~(62)~~
MJE~~(81)~~

ON Semiconductor MJE2955TG

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