ON Semiconductor MJD50T4

Name: MJD50T4
Brand: ON Semiconductor
SKU: 2466969-MJD50T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD50T4

Manufacturer:: ON Semiconductor

Ventron No:: 2466969-MJD50T4

Description:: TRANS NPN 400V 1A DPAK

ECAD Model:

Datasheet:: MJD50

Specifications

ON Semiconductor MJD50T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD50T4.

Voltage - Collector Emitter Breakdown (Max):
400V
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Transistor Type:
NPN
Supplier Device Package:
DPAK-3
Series:
-
Power - Max:
1.56W
Packaging:
Original-Reel®
Package / Case:
TO-252-3, DPak (2 Leads Tab), SC-63
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Frequency - Transition:
10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Current - Collector Cutoff (Max):
200µA
Current - Collector (Ic) (Max):
1A

Description

part#MJD50T4, Manufacturer:AMI Semiconductor / ON Semiconductor is available at ventronchip.com, see description of MJD50T4 as below .use the request quote form to request MJD50T4 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for MJD50T4 depending on the quantity required, availability and warehouse location.

MJD50T4 More Descriptions

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RES SMD 6.49K OHM 1% 1/2W 1206

Product Comparison

The three parts on the right have similar specifications to MJD50T4.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

RoHS Status

Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

Lead Free

Lifecycle Status

Factory Lead Time

Contact Plating

Surface Mount

Number of Pins

Published

Pbfree Code

Frequency

Power Dissipation

Collector Emitter Saturation Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
MJD50T4

ON Semiconductor

400V

1V @ 200mA, 1A

NPN

DPAK-3

-

1.56W

Original-Reel®

TO-252-3, DPak (2 Leads Tab), SC-63

-65°C ~ 150°C (TJ)

Surface Mount

10MHz

30 @ 300mA, 10V

200µA

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD5731T4

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

DPAK

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

1.56W

PNP

30 @ 300mA 10V

100μA

1V @ 200mA, 1A

350V

1A

10MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD50T4 vs MJD5731T4
MJD50T4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

NPN

30 @ 300mA 10V

100μA

1V @ 200mA, 1A

-

-

-

ROHS3 Compliant

Surface Mount

SILICON

e3

2

EAR99

Matte Tin (Sn)

Other Transistors

400V

15W

GULL WING

260

not_compliant

1A

30

MJD50

3

R-PSSO-G2

Not Qualified

1

Single

COLLECTOR

SWITCHING

10MHz

NPN

1V

1A

TO-252AA

400V

10MHz

400V

500V

5V

30

1 V

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD50G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-65°C~150°C TJ

Tube

Active

1 (Unlimited)

-

NPN

30 @ 300mA 10V

200μA

1V @ 200mA, 1A

-

-

-

ROHS3 Compliant

-

SILICON

e3

2

EAR99

-

Other Transistors

400V

1.56W

GULL WING

260

-

1A

40

MJD50

3

R-PSSO-G2

-

1

Single

COLLECTOR

SWITCHING

10MHz

NPN

400V

1A

-

400V

10MHz

-

500V

5V

30

-

Lead Free

ACTIVE (Last Updated: 5 days ago)

8 Weeks

Tin

YES

3

2006

yes

10MHz

1.56W

1V

2.38mm

6.73mm

6.22mm

No SVHC

No

MJD50T4 vs MJD50G