STMicroelectronics MJD50T4
- Part Number:
- MJD50T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465860-MJD50T4
- Description:
- TRANS NPN 400V 1A DPAK
- Datasheet:
- MJD50
STMicroelectronics MJD50T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD50T4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation15W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJD50
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product10MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA 10V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-252AA
- Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
- Collector Emitter Breakdown Voltage400V
- Transition Frequency10MHz
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)500V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- VCEsat-Max1 V
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
MJD50T4 Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD50T4 Features
the DC current gain for this device is 30 @ 300mA 10V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50T4 Applications
There are a lot of STMicroelectronics
MJD50T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD50T4 Features
the DC current gain for this device is 30 @ 300mA 10V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50T4 Applications
There are a lot of STMicroelectronics
MJD50T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD50T4 More Descriptions
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RES SMD 6.49K OHM 1% 1/2W 1206
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RES SMD 6.49K OHM 1% 1/2W 1206
The three parts on the right have similar specifications to MJD50T4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingSurface MountNumber of PinsWeightPublishedPbfree CodeFrequencyPower DissipationCollector Emitter Saturation VoltageHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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MJD50T4Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn)Other Transistors400V15WGULL WING260not_compliant1A30MJD503R-PSSO-G2Not Qualified1SingleCOLLECTORSWITCHING10MHzNPNNPN1V1A30 @ 300mA 10V100μATO-252AA1V @ 200mA, 1A400V10MHz400V500V5V301 VROHS3 CompliantContains Lead------------------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)---------------------PNP--30 @ 300mA 10V100μA-1V @ 200mA, 1A-------Non-RoHS Compliant-DPAK1.56W350V1A10MHz------------------------------
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---------------------------------------------------400V1V @ 200mA, 1ANPNDPAK-3-1.56WOriginal-Reel®TO-252-3, DPak (2 Leads Tab), SC-63-65°C ~ 150°C (TJ)Surface Mount10MHz30 @ 300mA, 10V200µA1A-----------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)2EAR99-Other Transistors-350V1.56WGULL WING260--1A40MJD57313R-PSSO-G2-1SingleCOLLECTORSWITCHING10MHzPNPPNP350V1A30 @ 300mA 10V100μA-1V @ 200mA, 1A350V10MHz350V5V5V30-ROHS3 CompliantLead Free-------------------ACTIVE (Last Updated: 4 days ago)8 WeeksTinYES34.535924g2005yes10MHz1.56W1V6.35mm6.35mm6.35mmNo SVHCNo
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