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MJD50G

ON Semiconductor MJD50G

Part Number:
MJD50G
Manufacturer:
ON Semiconductor
Ventron No:
2464720-MJD50G
Description:
TRANS NPN 400V 1A DPAK
ECAD Model:
Datasheet:
MJD50G

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Specifications
ON Semiconductor MJD50G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD50G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    400V
  • Max Power Dissipation
    1.56W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Frequency
    10MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD50
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.56W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    10MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    400V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 300mA 10V
  • Current - Collector Cutoff (Max)
    200μA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 200mA, 1A
  • Collector Emitter Breakdown Voltage
    400V
  • Transition Frequency
    10MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    500V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    30
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD50G Overview
DC current gain in this device equals 30 @ 300mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 1A volts.

MJD50G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz


MJD50G Applications
There are a lot of ON Semiconductor
MJD50G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD50G More Descriptions
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 400V 1A 1560mW Automotive 3-Pin(2 Tab) DPAK Tube
MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252-3
Transistor, Bipolar, Si, NPN, High Voltage, Power, VCEO 400VDC, IC 1A, PD 15W, DPAK | ON Semiconductor MJD50G
Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:1A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:10Mhz; Dc Current Gain Hfe Min:30Hfe Rohs Compliant: Yes |Onsemi MJD50G.
Product Comparison
The three parts on the right have similar specifications to MJD50G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Mount
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    JEDEC-95 Code
    Max Breakdown Voltage
    VCEsat-Max
    Weight
    View Compare
  • MJD50G
    MJD50G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    400V
    1.56W
    GULL WING
    260
    1A
    10MHz
    40
    MJD50
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    SWITCHING
    10MHz
    NPN
    NPN
    400V
    1A
    30 @ 300mA 10V
    200μA
    1V @ 200mA, 1A
    400V
    10MHz
    1V
    500V
    5V
    30
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD5731T4
    MJD5731T4
    ON Semiconductor
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    30 @ 300mA 10V
    100μA
    1V @ 200mA, 1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    DPAK
    1.56W
    350V
    1A
    10MHz
    -
    -
    -
    -
    -
    -
    -
    -
    MJD50G vs MJD5731T4
  • MJD50T4
    MJD50T4
    STMicroelectronics
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    400V
    15W
    GULL WING
    260
    1A
    -
    30
    MJD50
    3
    R-PSSO-G2
    1
    Single
    -
    COLLECTOR
    SWITCHING
    10MHz
    NPN
    NPN
    1V
    1A
    30 @ 300mA 10V
    100μA
    1V @ 200mA, 1A
    400V
    10MHz
    -
    500V
    5V
    30
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    Surface Mount
    Matte Tin (Sn)
    not_compliant
    Not Qualified
    TO-252AA
    400V
    1 V
    -
    MJD50G vs MJD50T4
  • MJD5731T4G
    MJD5731T4G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -350V
    1.56W
    GULL WING
    260
    -1A
    10MHz
    40
    MJD5731
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    SWITCHING
    10MHz
    PNP
    PNP
    350V
    1A
    30 @ 300mA 10V
    100μA
    1V @ 200mA, 1A
    350V
    10MHz
    1V
    5V
    5V
    30
    6.35mm
    6.35mm
    6.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    350V
    -
    4.535924g
    MJD50G vs MJD5731T4G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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