ON Semiconductor MJD50

Name: MJD50
Brand: ON Semiconductor
SKU: 2472214-MJD50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD50

Manufacturer:: ON Semiconductor

Ventron No:: 2472214-MJD50

Description:: TRANS NPN 400V 1A DPAK

ECAD Model:

Datasheet:: MJD50

Specifications

ON Semiconductor MJD50 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD50.

Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
1A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
MJD50
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

MJD50 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

MJD50 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJD50 Applications
There are a lot of ON Semiconductor
MJD50 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD50 More Descriptions

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RES SMD 6.34K OHM 1% 1/2W 1206

Product Comparison

The three parts on the right have similar specifications to MJD50.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mount

JEDEC-95 Code

Max Breakdown Voltage

VCEsat-Max

Factory Lead Time

Contact Plating

Frequency

Power Dissipation

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
MJD50

ON Semiconductor

OBSOLETE (Last Updated: 1 week ago)

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tube

2009

e0

no

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

8541.29.00.95

Other Transistors

400V

1.56W

GULL WING

240

not_compliant

1A

30

MJD50

3

R-PSSO-G2

Not Qualified

1

Single

COLLECTOR

SWITCHING

10MHz

NPN

NPN

1V

1A

30 @ 300mA 10V

200μA

1V @ 200mA, 1A

400V

10MHz

1V

500V

5V

30

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD50T4

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

400V

1V @ 200mA, 1A

NPN

DPAK-3

-

1.56W

Original-Reel®

TO-252-3, DPak (2 Leads Tab), SC-63

-65°C ~ 150°C (TJ)

Surface Mount

10MHz

30 @ 300mA, 10V

200µA

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD50 vs MJD50T4
MJD50T4

STMicroelectronics

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

150°C TJ

Tape & Reel (TR)

-

e3

-

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

-

Other Transistors

400V

15W

GULL WING

260

not_compliant

1A

30

MJD50

3

R-PSSO-G2

Not Qualified

1

Single

COLLECTOR

SWITCHING

10MHz

NPN

NPN

1V

1A

30 @ 300mA 10V

100μA

1V @ 200mA, 1A

400V

10MHz

-

500V

5V

30

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252AA

400V

1 V

-

-

-

-

-

-

-

-

-

MJD50 vs MJD50T4
MJD50G

ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tube

2006

e3

yes

Active

1 (Unlimited)

2

EAR99

-

-

Other Transistors

400V

1.56W

GULL WING

260

-

1A

40

MJD50

3

R-PSSO-G2

-

1

Single

COLLECTOR

SWITCHING

10MHz

NPN

NPN

400V

1A

30 @ 300mA 10V

200μA

1V @ 200mA, 1A

400V

10MHz

1V

500V

5V

30

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8 Weeks

Tin

10MHz

1.56W

2.38mm

6.73mm

6.22mm

No SVHC

No

MJD50 vs MJD50G