ON Semiconductor MJ11015G
- Part Number:
- MJ11015G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068759-MJ11015G
- Description:
- TRANS PNP DARL 120V 30A TO3
- Datasheet:
- MJ11015G
ON Semiconductor MJ11015G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11015G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTray
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-120V
- Max Power Dissipation200W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating-30A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count2
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation200W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)120V
- Max Collector Current30A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A 5V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
- Collector Emitter Breakdown Voltage120V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage3V
- Frequency - Transition4MHz
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Continuous Collector Current30A
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ11015G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.
MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz
MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.
MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz
MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ11015G More Descriptions
30 A, 120 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 120 V 30 A PNP High Current Darlington Silicon Transistor TO-204AA
BIPOLAR TRANSISTOR, PNP, -120V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:200W; DC Collector Current:30A; RF Transistor Case:TO-3; No. of Pins:2Pins; DC Current Gain hFE:1000hFE RoHS Compliant: Yes
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 120 V 30 A PNP High Current Darlington Silicon Transistor TO-204AA
BIPOLAR TRANSISTOR, PNP, -120V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:200W; DC Collector Current:30A; RF Transistor Case:TO-3; No. of Pins:2Pins; DC Current Gain hFE:1000hFE RoHS Compliant: Yes
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 September 2023
Comparing LM741CN and UA741CN Operational Amplifiers
The two op amps, LM741CN and UA741CN, have similar functional and performance characteristics. They both feature single op amps and similar supply voltages and pinouts. However, they have... -
18 September 2023
TL074CN Symbol, Features and Package
Ⅰ. Overview of TL074CNⅡ. 3D Model and symbol of TL074CNⅢ. Footprint of TL074CNⅣ. Technical parametersⅤ. Features of TL074CNⅥ. Application of TL074CNⅦ. Package of TL074CNⅧ. How to optimize the... -
18 September 2023
STM32F103C6T6 Microcontroller:Features, Package and Application
Ⅰ. What is STM32F103C6T6?Ⅱ. 3D Model and pins of STM32F103C6T6Ⅲ. Technical parametersⅣ. Features of STM32F103C6T6Ⅴ. Package of STM32F103C6T6Ⅵ. Application of STM32F103C6T6Ⅶ. Components of the STM32F103C6T6 minimum system boardⅧ.... -
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.