MJ11015G

ON Semiconductor MJ11015G

Part Number:
MJ11015G
Manufacturer:
ON Semiconductor
Ventron No:
3068759-MJ11015G
Description:
TRANS PNP DARL 120V 30A TO3
ECAD Model:
Datasheet:
MJ11015G

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Specifications
ON Semiconductor MJ11015G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11015G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Tray
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -120V
  • Max Power Dissipation
    200W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -30A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    120V
  • Max Collector Current
    30A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 20A 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 300mA, 30A
  • Collector Emitter Breakdown Voltage
    120V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    3V
  • Frequency - Transition
    4MHz
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    1000
  • Continuous Collector Current
    30A
  • Height
    8.51mm
  • Length
    39.37mm
  • Width
    26.67mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJ11015G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.

MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz


MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJ11015G More Descriptions
30 A, 120 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 120 V 30 A PNP High Current Darlington Silicon Transistor TO-204AA
BIPOLAR TRANSISTOR, PNP, -120V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Power Dissipation Pd:200W; DC Collector Current:30A; RF Transistor Case:TO-3; No. of Pins:2Pins; DC Current Gain hFE:1000hFE RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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