ON Semiconductor MJ11028G

MJ11028G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.

MJ11028G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A


MJ11028G Applications
There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.


Inverter
Interface
Driver
Muting