ON Semiconductor MCH6320-TL-E
- Part Number:
- MCH6320-TL-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586704-MCH6320-TL-E
- Description:
- MOSFET P-CH 12V 3.5A MCPH6
- Datasheet:
- MCH6320-TL-E
ON Semiconductor MCH6320-TL-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MCH6320-TL-E.
- Lifecycle StatusLIFETIME (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case6-SMD, Flat Leads
- Surface MountYES
- Number of Pins6
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Pin Count6
- Power Dissipation-Max1.5W Ta
- Element ConfigurationSingle
- Power Dissipation1.5W
- Turn On Delay Time8.8 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs70m Ω @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id1.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds405pF @ 6V
- Current - Continuous Drain (Id) @ 25°C3.5A Ta
- Gate Charge (Qg) (Max) @ Vgs5.6nC @ 4.5V
- Rise Time80ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±10V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)3.5A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage12V
- Height850μm
- Length2mm
- Width1.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MCH6320-TL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 405pF @ 6V.This device conducts a continuous drain current (ID) of 3.5A, which is the maximum continuous current transistor can conduct.Using VGS=12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 41 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
MCH6320-TL-E Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 41 ns
MCH6320-TL-E Applications
There are a lot of ON Semiconductor
MCH6320-TL-E applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 405pF @ 6V.This device conducts a continuous drain current (ID) of 3.5A, which is the maximum continuous current transistor can conduct.Using VGS=12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 41 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
MCH6320-TL-E Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 41 ns
MCH6320-TL-E Applications
There are a lot of ON Semiconductor
MCH6320-TL-E applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
MCH6320-TL-E More Descriptions
Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
MCH6320-TL-E P-channel MOSFET Transistor, 3.5 A, 12 V, 6-Pin MCPH | ON Semiconductor MCH6320-TL-E
Single P-Channel Power MOSFET, -12V, -3.5A, 70mΩ
MOSFET, P CH, 12V, 3.5A, SC-82; Transistor Polarity:P-Channel; Current Id Max:-3.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:10V; Power Dissipation:1.5W; Transistor Case Style:SC-82; No. of Pins:6
MCH6320-TL-E P-channel MOSFET Transistor, 3.5 A, 12 V, 6-Pin MCPH | ON Semiconductor MCH6320-TL-E
Single P-Channel Power MOSFET, -12V, -3.5A, 70mΩ
MOSFET, P CH, 12V, 3.5A, SC-82; Transistor Polarity:P-Channel; Current Id Max:-3.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:10V; Power Dissipation:1.5W; Transistor Case Style:SC-82; No. of Pins:6
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