Fairchild/ON Semiconductor KSP42TA
- Part Number:
- KSP42TA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462981-KSP42TA
- Description:
- TRANS NPN 300V 0.5A TO-92
- Datasheet:
- KSP42TA
Fairchild/ON Semiconductor KSP42TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP42TA.
- Lifecycle StatusACTIVE (Last Updated: 17 hours ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating500mA
- Frequency50MHz
- Base Part NumberKSP42
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSP42TA Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSP42TA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
300V 625mW 40@30mA,10V 500mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 300V 0.5A 625mW 3-Pin TO-92 Fan-Fold
KSP42 Series 300 V 625 mW Through Hole High Voltage Transistor - TO-92-3
TRANSISTOR, BIPOL, NPN, 300V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 25hFE; Transistor Case Style: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
300V 625mW 40@30mA,10V 500mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 300V 0.5A 625mW 3-Pin TO-92 Fan-Fold
KSP42 Series 300 V 625 mW Through Hole High Voltage Transistor - TO-92-3
TRANSISTOR, BIPOL, NPN, 300V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 25hFE; Transistor Case Style: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to KSP42TA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminationView Compare
-
KSP42TAACTIVE (Last Updated: 17 hours ago)6 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2002e3yesActive1 (Unlimited)3EAR99Other Transistors300V625mWBOTTOM500mA50MHzKSP421Single625mWAMPLIFIER50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V404.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead Free---
-
ACTIVE (Last Updated: 18 hours ago)14 Weeks-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICON150°C TJBulk2002e3yesActive1 (Unlimited)3EAR99Other Transistors400V625mWBOTTOM300A-KSP441Single625mW--NPNNPN400V300mA50 @ 10mA 10V500nA750mV @ 5mA, 50mA400V-750mV-500V6V504.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)-
-
ACTIVE (Last Updated: 18 hours ago)2 Weeks-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99Other Transistors200V625mWBOTTOM500mA50MHzKSP431Single625mWAMPLIFIER50MHzNPNNPN200V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA200V50MHz500mV200V200V6V40----NoROHS3 CompliantLead FreeTin (Sn)-
-
ACTIVE (Last Updated: 19 hours ago)6 Weeks-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99Other Transistors400V625mWBOTTOM300mA-KSP441Single625mW--NPNNPN400V300mA50 @ 10mA 10V500nA750mV @ 5mA, 50mA400V100MHz750mV400V500V6V505.33mm5.2mm4.19mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)Through Hole
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