KSP42TA

Fairchild/ON Semiconductor KSP42TA

Part Number:
KSP42TA
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2462981-KSP42TA
Description:
TRANS NPN 300V 0.5A TO-92
ECAD Model:
Datasheet:
KSP42TA

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Specifications
Fairchild/ON Semiconductor KSP42TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP42TA.
  • Lifecycle Status
    ACTIVE (Last Updated: 17 hours ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Number of Pins
    3
  • Weight
    240mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    300V
  • Max Power Dissipation
    625mW
  • Terminal Position
    BOTTOM
  • Current Rating
    500mA
  • Frequency
    50MHz
  • Base Part Number
    KSP42
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    625mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 30mA 10V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 2mA, 20mA
  • Collector Emitter Breakdown Voltage
    300V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    300V
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    40
  • Height
    4.58mm
  • Length
    4.58mm
  • Width
    3.86mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
KSP42TA Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.

KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
KSP42TA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
300V 625mW 40@30mA,10V 500mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 300V 0.5A 625mW 3-Pin TO-92 Fan-Fold
KSP42 Series 300 V 625 mW Through Hole High Voltage Transistor - TO-92-3
TRANSISTOR, BIPOL, NPN, 300V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 25hFE; Transistor Case Style: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to KSP42TA.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Termination
    View Compare
  • KSP42TA
    KSP42TA
    ACTIVE (Last Updated: 17 hours ago)
    6 Weeks
    Tin
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    240mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    300V
    625mW
    BOTTOM
    500mA
    50MHz
    KSP42
    1
    Single
    625mW
    AMPLIFIER
    50MHz
    NPN
    NPN
    300V
    500mA
    40 @ 30mA 10V
    100nA ICBO
    500mV @ 2mA, 20mA
    300V
    50MHz
    500mV
    300V
    300V
    6V
    40
    4.58mm
    4.58mm
    3.86mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • KSP44BU
    ACTIVE (Last Updated: 18 hours ago)
    14 Weeks
    -
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    179mg
    SILICON
    150°C TJ
    Bulk
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    400V
    625mW
    BOTTOM
    300A
    -
    KSP44
    1
    Single
    625mW
    -
    -
    NPN
    NPN
    400V
    300mA
    50 @ 10mA 10V
    500nA
    750mV @ 5mA, 50mA
    400V
    -
    750mV
    -
    500V
    6V
    50
    4.58mm
    4.58mm
    3.86mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
  • KSP43TA
    ACTIVE (Last Updated: 18 hours ago)
    2 Weeks
    -
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    240mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    200V
    625mW
    BOTTOM
    500mA
    50MHz
    KSP43
    1
    Single
    625mW
    AMPLIFIER
    50MHz
    NPN
    NPN
    200V
    500mA
    40 @ 30mA 10V
    100nA ICBO
    500mV @ 2mA, 20mA
    200V
    50MHz
    500mV
    200V
    200V
    6V
    40
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
  • KSP44TA
    ACTIVE (Last Updated: 19 hours ago)
    6 Weeks
    -
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    240mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    400V
    625mW
    BOTTOM
    300mA
    -
    KSP44
    1
    Single
    625mW
    -
    -
    NPN
    NPN
    400V
    300mA
    50 @ 10mA 10V
    500nA
    750mV @ 5mA, 50mA
    400V
    100MHz
    750mV
    400V
    500V
    6V
    50
    5.33mm
    5.2mm
    4.19mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    Through Hole
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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