Microsemi Corporation JANTXV2N6849

JANTXV2N6849 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 25A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

JANTXV2N6849 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6.5A
based on its rated peak drain current 25A.
a 100V drain to source voltage (Vdss)


JANTXV2N6849 Applications
There are a lot of Microsemi Corporation
JANTXV2N6849 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,