Microsemi Corporation JANTXV2N6784

Name: JANTXV2N6784
Brand: Microsemi Corporation
SKU: 2491579-JANTXV2N6784
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N6784

Manufacturer:: Microsemi Corporation

Ventron No:: 2491579-JANTXV2N6784

Description:: MOSFET N-CH

ECAD Model:

Datasheet:: JANTXV2N6784

Specifications

Microsemi Corporation JANTXV2N6784 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N6784.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AF Metal Can
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/556
Published
1997
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
RADIATION HARDENED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
MILITARY STANDARD (USA)
JESD-30 Code
O-MBCY-W3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation-Max
800mW Ta 15W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
2.25A Tc
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
2.25A
JEDEC-95 Code
TO-39
Drain-source On Resistance-Max
1.5Ohm
Pulsed Drain Current-Max (IDM)
9A
DS Breakdown Voltage-Min
200V
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N6784 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.25A.Peak drain current for this device is 9A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

JANTXV2N6784 Features
a continuous drain current (ID) of 2.25A
based on its rated peak drain current 9A.
a 200V drain to source voltage (Vdss)

JANTXV2N6784 Applications
There are a lot of Microsemi Corporation
JANTXV2N6784 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

JANTXV2N6784 More Descriptions

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
Non-Compliant Through Hole Bulk TO-39 3 Production (Last Updated: 2 years ago) 15 W 1
Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39

Certification