Microsemi Corporation JANTX2N6802U

JANTX2N6802U Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 0.31 mJ.This device has a continuous drain current (ID) of [2.5A], which is its maximum continuous current.A maximum pulsed drain current of 11A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

JANTX2N6802U Features
the avalanche energy rating (Eas) is 0.31 mJ
a continuous drain current (ID) of 2.5A
based on its rated peak drain current 11A.
a 500V drain to source voltage (Vdss)


JANTX2N6802U Applications
There are a lot of Microsemi Corporation
JANTX2N6802U applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit