Microsemi Corporation JANTX2N6784

Name: JANTX2N6784
Brand: Microsemi Corporation
SKU: 2491529-JANTX2N6784
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTX2N6784

Manufacturer:: Microsemi Corporation

Ventron No:: 2491529-JANTX2N6784

Description:: MOSFET N-CH TO-205AF TO-39

ECAD Model:

Datasheet:: JANTX2N6784

Specifications

Microsemi Corporation JANTX2N6784 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N6784.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AF Metal Can
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/556
Published
1997
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
RADIATION HARDENED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
MILITARY STANDARD (USA)
JESD-30 Code
O-MBCY-W3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation-Max
800mW Ta 15W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
2.25A Tc
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
2.25A
JEDEC-95 Code
TO-39
Drain-source On Resistance-Max
1.5Ohm
Pulsed Drain Current-Max (IDM)
9A
DS Breakdown Voltage-Min
200V
RoHS Status
Non-RoHS Compliant

Description

JANTX2N6784 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 9A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

JANTX2N6784 Features
a continuous drain current (ID) of 2.25A
based on its rated peak drain current 9A.
a 200V drain to source voltage (Vdss)

JANTX2N6784 Applications
There are a lot of Microsemi Corporation
JANTX2N6784 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

JANTX2N6784 More Descriptions

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3Infineon SCT
Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39

Certification