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JAN2N6849

Microsemi Corporation JAN2N6849

Part Number:
JAN2N6849
Manufacturer:
Microsemi Corporation
Ventron No:
2491501-JAN2N6849
Description:
MOSFET P-CH 100V 6.5A TO-39
ECAD Model:
Datasheet:
JAN2N6849

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Specifications
Microsemi Corporation JAN2N6849 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N6849.
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AF Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/564
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    800mW Ta 25W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    800mW
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    320m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    6.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    34.8nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    6.5A
  • Gate to Source Voltage (Vgs)
    20V
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N6849 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.5A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

JAN2N6849 Features
a continuous drain current (ID) of 6.5A
a 100V drain to source voltage (Vdss)


JAN2N6849 Applications
There are a lot of Microsemi Corporation
JAN2N6849 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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