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JAN2N2906A

Microsemi Corporation JAN2N2906A

Part Number:
JAN2N2906A
Manufacturer:
Microsemi Corporation
Ventron No:
2846283-JAN2N2906A
Description:
TRANS PNP 60V 0.6A TO18
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JAN2N2906A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2906A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Supplier Device Package
    TO-18
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    PNP
  • Power Dissipation
    500mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N2906A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.TO-18 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.

JAN2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18


JAN2N2906A Applications
There are a lot of Microsemi Corporation
JAN2N2906A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N2906A More Descriptions
Compliant Through Hole PNP TO-18 3 Production (Last Updated: 1 month ago) 500 mW 1
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18
Small-Signal BJT _ TO-18
TRANS PNP 60V 0.6A TO18
Product Comparison
The three parts on the right have similar specifications to JAN2N2906A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Number of Elements
    Polarity
    Power Dissipation
    Power - Max
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Pin Count
    Qualification Status
    Configuration
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transition Frequency
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • JAN2N2906A
    JAN2N2906A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AA, TO-18-3 Metal Can
    3
    TO-18
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/291
    2007
    Active
    1 (Unlimited)
    200°C
    -65°C
    500mW
    1
    PNP
    500mW
    500mW
    PNP
    60V
    600mA
    40 @ 150mA 10V
    50nA
    1.6V @ 50mA, 500mA
    60V
    60V
    600mA
    60V
    5V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N3500
    JAN2N3500
    Microsemi Corporation
    -
    23 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/366
    2007
    Active
    1 (Unlimited)
    -
    -
    1W
    1
    -
    -
    1W
    NPN
    150V
    300mA
    40 @ 150mA 10V
    10μA ICBO
    400mV @ 15mA, 150mA
    -
    -
    -
    150V
    -
    No
    Non-RoHS Compliant
    SILICON
    e0
    no
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    Other Transistors
    BOTTOM
    WIRE
    2
    Qualified
    SINGLE
    COLLECTOR
    SWITCHING
    NPN
    150MHz
    1150ns
    115ns
    JAN2N2906A vs JAN2N3500
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    3
    TO-46-3
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    2007
    Discontinued
    1 (Unlimited)
    200°C
    -65°C
    500mW
    -
    -
    -
    500mW
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    80V
    80V
    1A
    140V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    JAN2N2906A vs JAN2N3057A
  • JAN2N2222AUA
    JAN2N2222AUA
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    23 Weeks
    Surface Mount
    Surface Mount
    4-SMD
    4
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    2007
    Discontinued
    1 (Unlimited)
    200°C
    -65°C
    500mW
    -
    -
    -
    500mW
    NPN
    1V
    800mA
    100 @ 150mA 10V
    50nA
    1V @ 50mA, 500mA
    50V
    50V
    800mA
    75V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    JAN2N2906A vs JAN2N2222AUA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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