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JAN2N2907AL

Microsemi Corporation JAN2N2907AL

Part Number:
JAN2N2907AL
Manufacturer:
Microsemi Corporation
Ventron No:
2846495-JAN2N2907AL
Description:
TRANS PNP 60V 0.6A 4UA
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JAN2N2907AL technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2907AL.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount, Through Hole
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, No Lead
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    500mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Reference Standard
    MIL-19500/291
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    1.6V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • JEDEC-95 Code
    TO-206AA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    60V
  • Turn On Time-Max (ton)
    45ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N2907AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maximum collector currents can be below 600mA volts.

JAN2N2907AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA


JAN2N2907AL Applications
There are a lot of Microsemi Corporation
JAN2N2907AL applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N2907AL More Descriptions
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip JAN2N2907AL
Trans GP BJT PNP 60V 600mA 3-Pin TO-18 Bag
TRANS GP BJT PNP 60V 0.6A
Product Comparison
The three parts on the right have similar specifications to JAN2N2907AL.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    Reference Standard
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Base Voltage (VCBO)
    Turn On Time-Max (ton)
    Radiation Hardening
    RoHS Status
    Power Dissipation
    Emitter Base Voltage (VEBO)
    Turn Off Time-Max (toff)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Supplier Device Package
    View Compare
  • JAN2N2907AL
    JAN2N2907AL
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    18 Weeks
    Surface Mount, Through Hole
    Surface Mount
    4-SMD, No Lead
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/291
    2007
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    Other Transistors
    500mW
    BOTTOM
    WIRE
    3
    MIL-19500/291
    Qualified
    1
    SINGLE
    COLLECTOR
    500mW
    SWITCHING
    PNP
    PNP
    1.6V
    600mA
    100 @ 150mA 10V
    50nA
    TO-206AA
    1.6V @ 50mA, 500mA
    60V
    60V
    45ns
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N3507AL
    JAN2N3507AL
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    22 Weeks
    Through Hole
    Through Hole
    TO-205AA, TO-5-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/349
    2007
    e0
    -
    Active
    1 (Unlimited)
    3
    EAR99
    TIN LEAD
    -
    Other Transistors
    1W
    BOTTOM
    WIRE
    3
    -
    Qualified
    1
    SINGLE
    COLLECTOR
    -
    SWITCHING
    NPN
    NPN
    50V
    3A
    30 @ 1.5A 2V
    -
    -
    1.5V @ 250mA, 2.5A
    -
    80V
    45ns
    No
    Non-RoHS Compliant
    1W
    5V
    90ns
    -
    -
    -
    -
    -
    JAN2N2907AL vs JAN2N3507AL
  • JAN2N2222AUA
    JAN2N2222AUA
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    23 Weeks
    Surface Mount
    Surface Mount
    4-SMD
    4
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    500mW
    -
    -
    NPN
    1V
    800mA
    100 @ 150mA 10V
    50nA
    -
    1V @ 50mA, 500mA
    50V
    75V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    200°C
    -65°C
    50V
    800mA
    -
    JAN2N2907AL vs JAN2N2222AUA
  • JAN2N2221A
    JAN2N2221A
    Microsemi Corporation
    -
    18 Weeks
    Through Hole
    Through Hole
    TO-206AA, TO-18-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    2007
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    500mW
    -
    -
    NPN
    50V
    800mA
    40 @ 150mA 10V
    50nA
    -
    1V @ 50mA, 500mA
    -
    75V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    200°C
    -65°C
    50V
    800mA
    TO-18 (TO-206AA)
    JAN2N2907AL vs JAN2N2221A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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