Microsemi Corporation JAN2N3500
- Part Number:
- JAN2N3500
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2846364-JAN2N3500
- Description:
- TRANS NPN 150V 0.3A TO-39
- Datasheet:
- JAN2N3500
Microsemi Corporation JAN2N3500 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3500.
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/366
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)150V
- Turn Off Time-Max (toff)1150ns
- Turn On Time-Max (ton)115ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3500 Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 300mA volts is possible.
JAN2N3500 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
a transition frequency of 150MHz
JAN2N3500 Applications
There are a lot of Microsemi Corporation
JAN2N3500 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 300mA volts is possible.
JAN2N3500 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
a transition frequency of 150MHz
JAN2N3500 Applications
There are a lot of Microsemi Corporation
JAN2N3500 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3500 More Descriptions
Trans GP BJT NPN 150V 0.3A 3-Pin TO-39
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 300 mA 1 W
Small-Signal BJT _ TO-39
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 300 mA 1 W
Small-Signal BJT _ TO-39
The three parts on the right have similar specifications to JAN2N3500.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcTransition FrequencyCollector Base Voltage (VCBO)Turn Off Time-Max (toff)Turn On Time-Max (ton)Radiation HardeningRoHS StatusLifecycle StatusReference StandardJEDEC-95 CodeCollector Emitter Breakdown VoltageSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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JAN2N350023 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3662007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.95Other Transistors1WBOTTOMWIRE2Qualified1SINGLECOLLECTOR1WSWITCHINGNPNNPN150V300mA40 @ 150mA 10V10μA ICBO400mV @ 15mA, 150mA150MHz150V1150ns115nsNoNon-RoHS Compliant----------
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18 WeeksSurface Mount, Through HoleSurface Mount4-SMD, No Lead3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors500mWBOTTOMWIRE3Qualified1SINGLECOLLECTOR500mWSWITCHINGPNPPNP1.6V600mA100 @ 150mA 10V50nA1.6V @ 50mA, 500mA-60V-45nsNoNon-RoHS CompliantIN PRODUCTION (Last Updated: 1 month ago)MIL-19500/291TO-206AA60V-----
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23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007--Discontinued1 (Unlimited)-----500mW-------500mW--NPN500mV1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA-140V--NoNon-RoHS CompliantIN PRODUCTION (Last Updated: 1 month ago)--80VTO-46-3200°C-65°C80V1A
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18 WeeksThrough HoleThrough HoleTO-206AA, TO-18-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/2552007--Active1 (Unlimited)-----500mW-------500mW--NPN50V800mA40 @ 150mA 10V50nA1V @ 50mA, 500mA-75V--NoNon-RoHS Compliant----TO-18 (TO-206AA)200°C-65°C50V800mA
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