Microsemi Corporation JAN2N2905
- Part Number:
- JAN2N2905
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466383-JAN2N2905
- Description:
- TRANS PNP 40V 0.6A TO39
- Datasheet:
- JAN2N2905
Microsemi Corporation JAN2N2905 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2905.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time23 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/290
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- Max Power Dissipation600mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Reference StandardMIL-19500/290K
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max800mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Turn On Time-Max (ton)45ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N2905 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.During maximum operation, collector current can be as low as 600mA volts.
JAN2N2905 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JAN2N2905 Applications
There are a lot of Microsemi Corporation
JAN2N2905 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.During maximum operation, collector current can be as low as 600mA volts.
JAN2N2905 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JAN2N2905 Applications
There are a lot of Microsemi Corporation
JAN2N2905 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N2905 More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
Small-Signal BJT _ TO-39
TRANS PNP 40V 0.6A TO39
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
Small-Signal BJT _ TO-39
TRANS PNP 40V 0.6A TO39
The three parts on the right have similar specifications to JAN2N2905.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeMax Power DissipationTerminal PositionTerminal FormPin CountReference StandardQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Collector Base Voltage (VCBO)Turn On Time-Max (ton)Radiation HardeningRoHS StatusSubcategoryJEDEC-95 CodeCollector Emitter Breakdown VoltageTransition FrequencyTurn Off Time-Max (toff)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)View Compare
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JAN2N2905IN PRODUCTION (Last Updated: 4 weeks ago)23 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2902007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95600mWBOTTOMWIRE2MIL-19500/290KQualified1SINGLECOLLECTOR800mWSWITCHINGPNPPNP40V600mA100 @ 150mA 10V1μA1.6V @ 50mA, 500mA600mA60V45nsNoNon-RoHS Compliant----------
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IN PRODUCTION (Last Updated: 1 month ago)18 WeeksSurface Mount, Through HoleSurface Mount4-SMD, No Lead3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/2912007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95500mWBOTTOMWIRE3MIL-19500/291Qualified1SINGLECOLLECTOR500mWSWITCHINGPNPPNP1.6V600mA100 @ 150mA 10V50nA1.6V @ 50mA, 500mA-60V45nsNoNon-RoHS CompliantOther TransistorsTO-206AA60V------
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-23 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3662007e0noActive1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.951WBOTTOMWIRE2-Qualified1SINGLECOLLECTOR1WSWITCHINGNPNNPN150V300mA40 @ 150mA 10V10μA ICBO400mV @ 15mA, 150mA-150V115nsNoNon-RoHS CompliantOther Transistors--150MHz1150ns----
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IN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007--Discontinued1 (Unlimited)----500mW--------500mW--NPN500mV1A50 @ 500mA 10V10nA500mV @ 50mA, 500mA1A140V-NoNon-RoHS Compliant--80V--TO-46-3200°C-65°C80V
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