IXYS IXTQ69N30P
- Part Number:
- IXTQ69N30P
- Manufacturer:
- IXYS
- Ventron No:
- 3070825-IXTQ69N30P
- Description:
- MOSFET N-CH 300V 69A TO-3P
- Datasheet:
- IXTQ69N30P
IXYS IXTQ69N30P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTQ69N30P.
- Factory Lead Time24 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPolarHT™
- Published2006
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishPure Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max500W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs49m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4960pF @ 25V
- Current - Continuous Drain (Id) @ 25°C69A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)69A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.049Ohm
- Drain to Source Breakdown Voltage300V
- Pulsed Drain Current-Max (IDM)200A
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTQ69N30P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4960pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 69A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=300V, and this device has a drain-to-source breakdown voltage of 300V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ69N30P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 200A.
IXTQ69N30P Applications
There are a lot of IXYS
IXTQ69N30P applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4960pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 69A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=300V, and this device has a drain-to-source breakdown voltage of 300V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ69N30P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 200A.
IXTQ69N30P Applications
There are a lot of IXYS
IXTQ69N30P applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IXTQ69N30P More Descriptions
N-Channel 300 V 69 A 49 mO Through Hole PolarHT Power Mosfet - TO-3P
Mosfet, N-Ch, 300V, 69A, To-3P Rohs Compliant: Yes
new, original packaged
Contact for details
Mosfet, N-Ch, 300V, 69A, To-3P Rohs Compliant: Yes
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXTQ69N30P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeJESD-609 CodeDrain to Source Voltage (Vdss)View Compare
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IXTQ69N30P24 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-33SILICON-55°C~150°C TJTubePolarHT™2006yesActive1 (Unlimited)3EAR99Pure Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-ChannelSWITCHING49m Ω @ 500mA, 10V5V @ 250μA4960pF @ 25V69A Tc180nC @ 10V25ns10V±20V27 ns75 ns69A20V0.049Ohm300V200A1500 mJROHS3 CompliantLead Free---
-
-Through HoleThrough HoleTO-3P-3, SC-65-33SILICON-55°C~175°C TJTubeTrenchMV™2006yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1430W TcSingleENHANCEMENT MODE430WDRAINN-ChannelSWITCHING4m Ω @ 25A, 10V4V @ 250μA7200pF @ 25V220A Tc158nC @ 10V62ns10V±20V53 ns53 ns220A-0.004Ohm55V600A1000 mJRoHS Compliant-e3-
-
-Through HoleThrough HoleTO-3P-3, SC-65-33SILICON-55°C~175°C TJTube-2008yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1360W TcSingleENHANCEMENT MODE360WDRAINN-ChannelSWITCHING6m Ω @ 50A, 10V4V @ 1mA6400pF @ 25V160A Tc164nC @ 10V61ns10V±20V36 ns65 ns160A20V0.006Ohm85V-1000 mJRoHS Compliant-e3-
-
-Through HoleThrough HoleTO-3P-3, SC-65-3---Tube---Active1 (Unlimited)-----MOSFET (Metal Oxide)----------N-Channel----62A Tc------62A-----ROHS3 Compliant--250V
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