IXYS IXTQ50N20P
- Part Number:
- IXTQ50N20P
- Manufacturer:
- IXYS
- Ventron No:
- 3586508-IXTQ50N20P
- Description:
- MOSFET N-CH 200V 50A TO-3P
- Datasheet:
- IXTQ50N20P
IXYS IXTQ50N20P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTQ50N20P.
- Factory Lead Time24 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPolarHT™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max360W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation360W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2720pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)50A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.06Ohm
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)120A
- Avalanche Energy Rating (Eas)1000 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTQ50N20P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2720pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXTQ50N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
IXTQ50N20P Applications
There are a lot of IXYS
IXTQ50N20P applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2720pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXTQ50N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
IXTQ50N20P Applications
There are a lot of IXYS
IXTQ50N20P applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXTQ50N20P More Descriptions
Mosfet, N-Ch, 200V, 50A, To-3P Rohs Compliant: Yes |Ixys Semiconductor IXTQ50N20P
Trans MOSFET N-CH 200V 50A 3-Pin(3 Tab) TO-3P
MOSFET N-CH 200V 50A TO3P
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
Trans MOSFET N-CH 200V 50A 3-Pin(3 Tab) TO-3P
MOSFET N-CH 200V 50A TO3P
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXTQ50N20P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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IXTQ50N20P24 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-33SILICON-55°C~175°C TJTubePolarHT™2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1360W TcSingleENHANCEMENT MODE360WDRAINN-ChannelSWITCHING60m Ω @ 50A, 10V5V @ 250μA2720pF @ 25V50A Tc70nC @ 10V35ns10V±20V30 ns70 ns50A20V0.06Ohm200V120A1000 mJROHS3 CompliantLead Free---
-
-Through HoleThrough HoleTO-3P-3, SC-65-3---Tube----Active1 (Unlimited)-----MOSFET (Metal Oxide)----------N-Channel----72A Tc------72A-----ROHS3 Compliant-TO-3P200V
-
-Through HoleThrough HoleTO-3P-3, SC-65-33SILICON-55°C~175°C TJTube-2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1455W TcSingleENHANCEMENT MODE455WDRAINN-ChannelSWITCHING20m Ω @ 45A, 10V4.5V @ 1mA4100pF @ 25V90A Tc80nC @ 10V22ns10V±30V19 ns44 ns90A30V0.02Ohm150V250A0.75 mJROHS3 Compliant---
-
-Through HoleThrough HoleTO-3P-3, SC-65-3---Tube----Active1 (Unlimited)-----MOSFET (Metal Oxide)----------N-Channel----102A Tc------102A-----ROHS3 Compliant--250V
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