IXYS IXTQ182N055T

IXTQ182N055T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4850pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 182A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 490A, which is the maximum pulsed drain current.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTQ182N055T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 182A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 490A.


IXTQ182N055T Applications
There are a lot of IXYS
IXTQ182N055T applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies