IXYS IXTP96P085T

Name: IXTP96P085T
Brand: IXYS
SKU: 2478454-IXTP96P085T
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXTP96P085T

Manufacturer:: IXYS

Ventron No:: 2478454-IXTP96P085T

Description:: MOSFET P-CH 85V 96A TO-220

ECAD Model:

Datasheet:: IXTP96P085T

Specifications

IXYS IXTP96P085T technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTP96P085T.

Factory Lead Time
24 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
TrenchP™
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
PURE TIN
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Pin Count
3
Number of Elements
1
Power Dissipation-Max
298W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
298W
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13m Ω @ 48A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C
96A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Drain to Source Voltage (Vdss)
85V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±15V
Continuous Drain Current (ID)
96A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
15V
Drain to Source Breakdown Voltage
-85V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXTP96P085T Overview
A device's maximal input capacitance is 13100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP96P085T Features
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
a 85V drain to source voltage (Vdss)

IXTP96P085T Applications
There are a lot of IXYS
IXTP96P085T applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IXTP96P085T More Descriptions

Single P-Channel 85 V 13 mOhm 298 W Power MosFet - TO-220AB
Mosfet, P-Ch, 85V, 96A, To-220Ab Rohs Compliant: Yes |Ixys Semiconductor IXTP96P085T
Trans MOSFET P-CH 85V 96A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 96A I(D), 85V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IXTP96P085T.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Technology

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

ECCN Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Terminal Position

Operating Temperature (Max)

Configuration

DS Breakdown Voltage-Min

Drain Current-Max (Abs) (ID)

View Compare
IXTP96P085T

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

TrenchP™

2010

e3

yes

Active

1 (Unlimited)

3

PURE TIN

AVALANCHE RATED

Other Transistors

MOSFET (Metal Oxide)

3

1

298W Tc

Single

ENHANCEMENT MODE

298W

DRAIN

P-Channel

SWITCHING

13m Ω @ 48A, 10V

4V @ 250μA

13100pF @ 25V

96A Tc

180nC @ 10V

85V

10V

±15V

96A

TO-220AB

15V

-85V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXTP200N085T

IXYS

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

TrenchMV™

2006

e3

yes

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

AVALANCHE RATED

-

MOSFET (Metal Oxide)

3

1

480W Tc

Single

ENHANCEMENT MODE

480W

DRAIN

N-Channel

SWITCHING

5m Ω @ 25A, 10V

4V @ 250μA

7600pF @ 25V

200A Tc

152nC @ 10V

-

10V

±20V

200A

TO-220AB

-

85V

-

RoHS Compliant

Lead Free

EAR99

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

80ns

64 ns

65 ns

0.005Ohm

540A

1000 mJ

-

-

-

-

-

IXTP96P085T vs IXTP200N085T
IXTP180N055T

IXYS

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-

Tube

-

2012

e3

yes

Obsolete

1 (Unlimited)

3

PURE TIN

-

-

MOSFET (Metal Oxide)

3

1

-

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

-

4V @ 1mA

-

180A Tc

-

55V

-

-

180A

TO-220AB

-

-

-

RoHS Compliant

-

EAR99

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

-

-

-

0.0051Ohm

600A

450 mJ

SINGLE

175°C

SINGLE WITH BUILT-IN DIODE

55V

-

IXTP96P085T vs IXTP180N055T
IXTP14N60PM

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

-

SILICON

-55°C~150°C TJ

Tube

PolarHV™

2008

e3

yes

Active

1 (Unlimited)

3

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

3

1

75W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

550m Ω @ 7A, 10V

5.5V @ 250μA

2500pF @ 25V

7A Tc

36nC @ 10V

600V

10V

±30V

7A

TO-220AB

-

-

-

ROHS3 Compliant

-

-

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

-

-

-

0.55Ohm

42A

900 mJ

SINGLE

-

SINGLE WITH BUILT-IN DIODE

600V

7A

IXTP96P085T vs IXTP14N60PM

Certification

Related parts for IXTP96P085T

IXTP200N075T

IXYS

MOSFET N-CH 75V 200A TO-220
IXTP240N055T

IXYS

MOSFET N-CH 55V 240A TO-220
IXTP160N075T

IXYS

MOSFET N-CH 75V 160A TO-220
IXTP200N085T

IXYS

MOSFET N-CH 85V 200A TO-220
IXTP220N055T

IXYS

MOSFET N-CH 55V 220A TO-220
IXTP180N055T

IXYS

MOSFET N-CH 55V 180A TO-220
IXTP2N100P

IXYS

MOSFET N-CH 1000V 2A TO-220
IXTP14N60PM

IXYS

MOSFET N-CH 600V 7A TO-220
IXTP05N100M

IXYS

MOSFET N-CH 1000V 700MA TO-220
IXTP1R6N100D2

IXYS

MOSFET N-CH 1000V 1.6A TO220AB

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IXTP96P~~(1)~~
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IXTP9~~(6)~~
IXTP~~(51)~~
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Part Number	Manufacturers	Description	Stock	Price
IXTP96P085T DISTI #V36:1790_15877534	IXYS Corporation	Trans MOSFET P-CH 85V 96A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	50 $2.77 500 $2.702
IXTP96P085T DISTI #V99:2348_15877534	IXYS Corporation	Trans MOSFET P-CH 85V 96A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0
IXTP96P085T DISTI #IXTP96P085T-ND	IXYS Corporation	MOSFET P-CH 85V 96A TO-220 RoHS: Compliant	0	1 $4.76 10 $4.25 50 $3.825 100 $3.485 500 $2.822 2500 $2.261
IXTP96P085T DISTI #747-IXTP96P085T	IXYS Corporation	MOSFET -96 Amps -85V 0.013 Rds RoHS: Compliant	0	1 $4.76 10 $4.29 25 $4.25 50 $3.82 100 $3.48 250 $3.42 500 $2.82 1000 $2.38 2500 $2.35
IXTP96P085T DISTI #IXTP96P085T	IXYS Corporation	P-Ch 85V 96A 298W 0,013R TO220AB RoHS: Compliant	82	1 $6.25 5 $3.25 20 $2.25 50 $2.15

IXYS IXTP96P085T

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