part No. IXTM6N90 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
IXTM6N90 More Descriptions
IXYS Power Transistor Module
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXTM6N90.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusFactory Lead TimePublishedPbfree CodePower DissipationDrain-source On Resistance-MaxRadiation HardeningSurface MountSeriesView Compare
-
IXTM6N90-------------------------------------------------
-
Through HoleThrough HoleTO-204AA, TO-33SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.4 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20V5A20A1000VROHS3 Compliant--------
-
Through HoleThrough HoleTO-204AA, TO-33SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEG--2O-MBFM-P2-1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20V5A20A-ROHS3 Compliant35 Weeks2000yes180W2OhmNo--
-
-Through HoleTO-204AA, TO-3-SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED-O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING950m Ω @ 5.5A, 10V4.5V @ 250μA4500pF @ 25V11A Tc170nC @ 10V800V10V±20V--11A44A800VROHS3 Compliant-2012yes-0.95Ohm-NOGigaMOS™
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
28 March 2024
An Introduction to TPS54302DDCR Synchronous Buck Converter
Ⅰ. What is TPS54302DDCR?Ⅱ. Characteristics of TPS54302DDCRⅢ. Simplified schematic of TPS54302DDCRⅣ. What are the advantages of TPS54302DDCR?Ⅴ. Technical parameters of TPS54302DDCRⅥ. Pin configuration and functions of TPS54302DDCRⅦ. Protection... -
28 March 2024
UCC27517DBVR Gate Driver: Replacements, Advantages, Application and Package
Ⅰ. UCC27517DBVR overviewⅡ. Technical parameters of UCC27517DBVRⅢ. UCC27517DBVR's typical characteristicsⅣ. What are the advantages of UCC27517DBVR compared with other gate driver ICs?Ⅴ. What applications is the UCC27517DBVR typically... -
29 March 2024
TLP2362 Optocoupler Characteristics, Specifications, Working Principle and More
Ⅰ. Overview of TLP2362Ⅱ. Characteristics of TLP2362Ⅲ. Specifications of TLP2362Ⅳ. Recommended operating conditions of TLP2362Ⅴ. How does TLP2362 work?Ⅵ. Internal equivalent circuit of TLP2362Ⅶ. Storage and soldering of... -
29 March 2024
STM32H743VIT6 Specifications, Characteristics, Pinout and Market Situation
Ⅰ. Description of STM32H743VIT6Ⅱ. Specifications of STM32H743VIT6Ⅲ. Characteristics of STM32H743VIT6Ⅳ. How to use STM32H743VIT6?Ⅴ. STM32H743VIT6 pinoutⅥ. Low-power strategy of STM32H743VIT6Ⅶ. Market situation of STM32H743VIT6Ⅰ. Description of STM32H743VIT6The STM32H743VIT6...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.